DQPSK/QPSK Modulation at 40-60 Gb/s using Low-Loss Nested Silicon Mach-Zehnder Modulator

Goi, Kazuhiro; Kusaka, Hiroyuki; Oka, Akira; Terada, Yosuke; Ogawa, Kensuke; Liow, Tsung-Yang; Tu, Xiaoguang; Lo, Guo‐Qiang; Kwong, Dim‐Lee

doi:10.1364/ofc.2013.ow4j.4

Cited by 26 publications

(10 citation statements)

References 2 publications

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“…Recently the use of more complex modulation formats from silicon optical modulators has also been the subject of investigation. For example modulation using DPSK [65], QPSK [66], DQPSK [66], PDM-QPSK [67] and PAM-16 [68] has been demonstrated from silicon based optical modulators.…”

Section: Silicon Based Carrier Depletion Optical Modulators For Longementioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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Section: Silicon Based Carrier Depletion Optical Modulators For Longementioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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“…To the best of our knowledge, this PIC is the first monolithic single-chip dual-polarization I/Q modulator, with highest photonic integration in this particular application. Single-polarization silicon I/Q modulators were also reported from other groups/companies with comparable performance to those LiNbO 3 -based coherent modulators [72][73][74]. Combining the dual-polarization silicon I/Q modulators and the silicon receiver based on on-chip polarization elements, Dong et al reported a 2560-km SFM transmission of a 112 Gb/s PDM-QPSK signal [75], validating the readiness of silicon PICs in optical coherent links.…”

Section: Coherent Transmittersmentioning

confidence: 76%

Silicon photonic devices and integrated circuits

Dong¹,

Chen²,

et al. 2014

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Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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“…Several theoretical and experimental studies regarding the optimization of TWE depletion-type Si modulators have been published in recent years [7]- [19]. Each of these studies was concerned with rather specific aspects of the modulator performance, such as high speed [16], low driving voltage [17], [18] or low insertion loss [19].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Optical and Electrical Tradeoffs of Traveling-Wave Depletion-Type Si Mach–Zehnder Modulators for High-Speed Operation

Petousi

Zimmermann

Gajda

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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Fundamental limiting factors regarding high-speed performance of broadband depletion-type silicon (Si) Mach-Zehnder modulators (MZMs) are studied. Optical and electrical measurements of MZMs with traveling wave electrodes (TWE) reveal significant dependences between optoelectrical bandwidth and design parameters. An equivalent circuit model is implemented to fit measured modulator characteristics. Using the model, the limits of TWE depletion-type Si MZM systems are studied under the requirement of specific driving voltage. By comparing phase shifters with different doping concentration or junction position, we explore the fundamental optical and electrical tradeoffs which are limiting high-speed operation.

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DQPSK/QPSK Modulation at 40-60 Gb/s using Low-Loss Nested Silicon Mach-Zehnder Modulator

Cited by 26 publications

References 2 publications

Recent breakthroughs in carrier depletion based silicon optical modulators

Recent breakthroughs in carrier depletion based silicon optical modulators

Silicon photonic devices and integrated circuits

Analysis of Optical and Electrical Tradeoffs of Traveling-Wave Depletion-Type Si Mach–Zehnder Modulators for High-Speed Operation

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