A low-loss high-speed silicon in-phase (I) quadrature (Q) modulator is designed, fabricated and characterized. The fabricated IQ modulator has a low passive optical loss of 9 dB in C and L bands. Using the modulator, differential quadrature phase-shift keying (DQPSK) transmission at 44.6 Gb/s with differential detection is confirmed with an optical signal-to-noise ratio (OSNR) of 16.3 dB for a bit error rate (BER) of 10(-3) and a dispersion tolerance of -96 to 107 ps/nm. Moreover, in digital coherent detection, quadrature phase-shift keying (QPSK) up to 64 Gb/s are achieved with an OSNR of 11.6-11.8 dB for a BER of 10(-2) at 1530, 1550, and 1610 nm.

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We present a low-loss and small-footprint polarization rotator based on mode evolution. The polarization rotator is composed of an asymmetric-rib waveguide and a tapered waveguide, both of which consist only of a silicon core and a silica cladding. The rotator is fabricated under the same design rules as other device blocks, such as rib-waveguide phase shifters for photonic integration. The polarization rotator is fabricated using CMOS-based processes and provides polarization rotations with an on-chip insertion loss lower than 0.5 dB from transverse-electric (TE) to transverse-magnetic (TM) polarization and a loss lower than 1.0 dB from the TM to TE polarization in a 200 nm wavelength range extending over C and L bands.

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