Droplet epitaxy for advanced optoelectronic materials and devices

Wu, Jiang; Wang, Zhiming

doi:10.1088/0022-3727/47/17/173001

Cited by 47 publications

(32 citation statements)

References 114 publications

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“…They also provide deep insights into the principles underlying the formation, structure, and possible control of interfaces separating different-symmetry-ordered as well as different-scale-ordered bulks and thin films, a broad subject loosely termed epitaxy. Epitaxy affects a wide range of research and application areas, ranging from strained surface layer relaxation [11] through quasicrystal film formation [12], quantum structures [13], and microelectromechanical systems [14] to biomimetic thin-film growth processes [15], biomineralization [16], and the stacking of lipid bilayers [17]. Thus, the novel pseudorotational epitaxy uncovered here has potentially wide-ranging implications in many fields.…”

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confidence: 94%

Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)

et al. 2014

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The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ∼ 1%-3% to the sapphire's and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in the crystalline coherence length of the SAM's powderlike crystallites when rotationally aligned with the sapphire's lattice. The increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.

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confidence: 94%

Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)

et al. 2014

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“…Due to the relative low optical quality of the nanostructures and AlGaAs spacer layers obtained at low growth temperatures, the performances of these prototype devices are still far from satisfactory. In addition to QDs and quantum rings, a rich spectrum of nanostructures can be fabricated via the DE method, such as nanorods, nanoholes, dome-shaped nanocrystals, square-shaped nanocrystals, pentagon-shaped nanocrystals and coupled quantum structures [29]. These nanostructures are promising for optoelectronic applications.…”

Section: Methodsmentioning

confidence: 99%

InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy

Gao

et al. 2017

Solar Energy Materials and Solar Cells

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Traditional p-i-n junction solar cells imbedded with quantum dots are attractive to achieve chromatic light absorption enhancement. In this paper, multi-layer stacked GaAs and In 0.1 Ga 0.9 As quantum dots grown by the droplet epitaxy technique are sandwiched between Al 0.4 Ga 0.6 As layers for solar energy harvesting. The performance of GaAs and InGaAs quantum dot solar cells is compared using structural, optical, and electrical measurements. Two-step photon absorption process is studied via adding external infrared pumping sources in quantum efficiency measurements at room temperature. This work demonstrates that strain-free nanostructures by droplet epitaxy are promising for photovoltaic application.

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“…Droplet epitaxy [1][2][3] has emerged as a flexible technique for growing quantum dots and more complex nanostructures [4][5][6][7][8][9][10][11]. In this approach, liquid droplets of group III metal are first deposited on a III-V semiconductor surface, for example Ga on GaAs(001).…”

Section: Introductionmentioning

confidence: 99%

Mapping the surface phase diagram of GaAs(001) using droplet epitaxy

Zheng

Hannikainen

Niu

et al. 2019

Phys. Rev. Materials

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We combine droplet epitaxy with low energy electron microscopy imaging techniques to map the surface phase diagram of GaAs(001). The phase patterns produced in droplet epitaxy are interpreted using a simple model which links the spatial coordinates of phase boundaries to the free energy. It is thereby possible to gain important new information on surface phase stability, based on the observed sequential order of the phases away from the droplet edge. This can be used to augment existing T = 0 K phase diagrams generated by density functional theory calculations. We establish the existence of a (3 × 6) phase, and confirm, that the controversial (6 × 6) phase is thermodynamically stable over a narrow range of chemical potential.

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Droplet epitaxy for advanced optoelectronic materials and devices

Cited by 47 publications

References 114 publications

Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)

Pseudorotational Epitaxy of Self-Assembled Octadecyltrichlorosilane Monolayers on Sapphire (0001)

InGaAs and GaAs quantum dot solar cells grown by droplet epitaxy

Mapping the surface phase diagram of GaAs(001) using droplet epitaxy

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