Dry etching process of GaAs in capacitively coupled BCl3-based plasmas

Lee, J.W.; Noh, H.S.; Lee, S.H.; Park, J.H.; Choi, Kwang Pyo; Pearton, S. J.

doi:10.1016/j.tsf.2010.02.003

Cited by 6 publications

(5 citation statements)

References 26 publications

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“…This feature makes the rf discharge suitable for application in different material processing areas. [19][20][21][22][23][24] The experimental parameters varied are operating power (10 W to 120 W) and pressure (10 mTorr to 350 mTorr). The three measured quantities, i.e., I rms , V rms , and average power P are used to calculate the reduction of the bulk plasma resistance as well as the deviation of the I rms from the homogeneous discharge model.…”

Section: Experimental Systemmentioning

confidence: 99%

Measurements of time average series resonance effect in capacitively coupled radio frequency discharge plasma

et al. 2011

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Self-excited plasma series resonance is observed in low pressure capacitvely coupled radio frequency discharges as high-frequency oscillations superimposed on the normal radio frequency current. This high-frequency contribution to the radio frequency current is generated by a series resonance between the capacitive sheath and the inductive and resistive bulk plasma. In this report, we present an experimental method to measure the plasma series resonance in a capacitively coupled radio frequency argon plasma by modifying the homogeneous discharge model. The homogeneous discharge model is modified by introducing a correction factor to the plasma resistance. Plasma parameters are also calculated by considering the plasma series resonances effect. Experimental measurements show that the self-excitation of the plasma series resonance, which arises in capacitive discharge due to the nonlinear interaction of plasma bulk and sheath, significantly enhances both the Ohmic and stochastic heating. The experimentally measured total dissipation, which is the sum of the Ohmic and stochastic heating, is found to increase significantly with decreasing pressure.

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Section: Experimental Systemmentioning

confidence: 99%

Measurements of time average series resonance effect in capacitively coupled radio frequency discharge plasma

et al. 2011

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“…Several plasma chemistries can be used to etch GaAs. Generally, chlorine gases are the most suitable to form GaCl x and AsCl x volatile products like BCl 3, − SiCl 4, and Cl 2. ,,− The current study focused on Cl 2 /nitrogen (N 2 ) chemistry using only chlorine gas, Cl 2 , which is less corrosive and dangerous than BCl 3 or SiCl 4 .…”

Section: Resultsmentioning

confidence: 99%

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

et al. 2022

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Vertical III–V nanowires are of great interest for a large number of applications, but their integration still suffers from manufacturing difficulties of these one-dimensional nanostructures on the standard Si(100) microelectronic platform at a large scale. Here, a top-down approach based on the structure of a thin III–V epitaxial layer on Si was proposed to obtain monolithic GaAs or GaSb nanowires as well as GaAs–Si nanowires with an axial heterostructure. Based on a few complementary metal–oxide–semiconductor-compatible fabrication steps, III–V nanowires with a high crystalline quality as well as a uniform diameter (30 nm), morphology, positioning, and orientation were fabricated. In addition, the patterning control of nanowires at the nanoscale was thoroughly characterized by structural and chemical analyses to finely tune the key process parameters. To properly control the morphology of the nanowires during reactive-ion etching (RIE), the balance between the plasma properties and the formation of a protective layer on the nanowire sidewall was studied in detail. Furthermore, high-resolution microscopy analyses were performed to gain a better understanding of the protective layer’s composition and to observe the crystalline quality of the nanowires. This approach paves the way for the possible scale-up integration of III–V-based nanowire devices with conventional Si/complementary metal–oxide–semiconductor technology.

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“…Due to this "self bias" the ion energies near the power electrode reaches up to few hundred eV. This feature makes the rf discharge suitable for application in different material processing areas [2,[15][16][17][18][19]. The experiment is carried out in 35 mtorr chamber pressure and the rf power is varied from 10 watt to 120 watt.…”

Section: Methodsmentioning

confidence: 99%

Diagnostic of Capacitively Coupled Low Pressure Radio Frequency Plasma: An Approach through Electrical Discharge Characteristic

Bora¹,

Bhuyan²,

Favre³

et al. 2011

IJAPM

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Abstract-Low temperature radio frequency plasma is widely used in low temperature plasma processing medium for material processing in many fields including microelectronics, aerospace, and the biology. For proper utilization of the process, it is very much important to know the plasma parameters. In this paper a technique is reported to determine the plasma parameters from the electrical discharge characteristic of a capacitivly couple radio frequency argon plasma. The homogeneous discharge model is modified to make it applicable in low pressure by incorporating the plasma series resonance effect. The effect on the plasma resistance by the change in drift velocity of the electron with rf electric filed is also considered. The electron density and temperature is found to be well agreed with the Langmuir probe diagnostic result, which is in the range of 0.5x10 10 to 4.5x10 10 cm -3 and 1.4 to 1.6 ev for wide range of rf power.Index Terms-Capacitive couple radio frequency plasma, discharge characteristic, homogeneous discharge model, plasma parameters, power balance.

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Dry etching process of GaAs in capacitively coupled BCl3-based plasmas

Cited by 6 publications

References 26 publications

Measurements of time average series resonance effect in capacitively coupled radio frequency discharge plasma

Measurements of time average series resonance effect in capacitively coupled radio frequency discharge plasma

Large-Scale Monolithic Fabrication of III–V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate

Diagnostic of Capacitively Coupled Low Pressure Radio Frequency Plasma: An Approach through Electrical Discharge Characteristic

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