Dual-band photodetectors based on interband and intersubband transitions

Liu, H.C; Song, C. Y.; Shen, Aidong; Gao, M.; Dupont, Emmanuel; Poole, Philip J.; Wasilewski, Z. R.; Buchanan, M.; Wilson, Paul; Robinson, B. J.; Thompson, David A.; Ohno, Youkichi; Ohno, Hideo

doi:10.1016/s1350-4495(01)00072-x

Cited by 12 publications

(7 citation statements)

References 13 publications

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“…This barrier is further lowered as the bias voltage increases facilitating more charge carriers to be collected at one of the electrodes, hence the increase of the photoresponse intensity. A similar photoresponse behavior is observed for interband transitions in GaAs/In x G 1−x As/In y Ga 1−y As multiple step quantum well structure [14], [15]. The dip observed around 0.83 µm (1.5 eV) is found to shift toward lower energy as the temperature increases.…”

Section: Resultssupporting

confidence: 74%

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

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Manasreh

et al. 2008

IEEE Electron Device Lett.

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Near-infrared photoresponse is observed in the temperature range of 77-300 K for a photodetector fabricated from undoped In 0.35 Ga 0.65 As/GaAs multiple quantum dots grown in a molecular beam epitaxy system. The detectivity is estimated to be on the order of 3.70 × 10 9 and 2.70 × 10 7 cm · √ Hz/W at 77 and 300 K, respectively. The reduction of the detectivity is attributed to the increase of the dark current as the temperature is increased. The photoresponse is explained in terms of several interband transitions. These transitions are found to be in good agreement with the self-consistent theoretical calculations.Index Terms-Infrared measurements, InGaAs quantum dots, photodetectors, room temperature photoresponse.

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Section: Resultssupporting

confidence: 74%

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

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Manasreh

et al. 2008

IEEE Electron Device Lett.

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“…InGaAs/(Ga)InP QWIPs met with similar difficulties in the LWIR and VLWIR regimes, with detectivities on the order of 1 × 10 9 cmHz 1/2 /W around LN 2 temperatures. These devices did exhibit stronger performance in the MWIR regime, feature operating temperatures over 100 K, responsivities as high as 2.2 A/W, and detectivities as high as 5 × 10 10 cmHz 1/2 [83,99–102]. There were also attempts made to adapt this material system for deposition on Si substrates, however performance of these devices is generally poorer than the normal performance of these devices, usually by an order of magnitude and sometimes more.…”

Section: Quantum Well Infrared Photodetectorsmentioning

confidence: 99%

“…Dual band absorption was incorporated into a number of the structures, with performance of these devices often similar to single color devices. Performance of AlGaAs/GaAs devices outstripped that of the (Al)GaAs/InGaAs and (In)GaAs/(Ga)InP in the early portion on the decade, encouraging further research in the later portion of the decade [102,105–109]. There has been an effort to try and extend the operational wavelengths of AlGaAs/GaAs towards the VLWIR regime, but these efforts only met very limited success.…”

Section: Quantum Well Infrared Photodetectorsmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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“…The photoresponse of the QWIPs are shown to emphasize the difficulty of observing NIR photoresponse for quantum well based devices. Although a few groups have reported on NIR photoresponse from quantum wells [19][20][21] , it has only been observed in one of our devices, the three stack QWIP. The three stack QWIP has two bands in the MIR and one band in the NIR spectral region.…”

Section: Energy (Ev)mentioning

confidence: 74%

Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection

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DeCuir

et al. 2008

SPIE Proceedings

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Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 -20 µm) detection applications. The materials were grown by molecular beam epitaxy and characterized using atomic force microscopy and photoluminescence. Devices were fabricated from the multiple quantum dot structures in order to measure the normal incident photoresponse at 77 and 300 K. In addition, the dark current was measured in the temperature range of 77 -300 K for the devices. A dual broadband photoresponse from the interband and intersubband transitions was measured to be 0.5 to 1.0 µm and 2.0 to 14.0 µm, respectively.

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Dual-band photodetectors based on interband and intersubband transitions

Cited by 12 publications

References 13 publications

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

Progress in Infrared Photodetectors Since 2000

Broadband photoresponse from InAs quantum dots embedded in a graded well for visible to mid-infrared detection

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