Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

Passmore, Brandon; Wu, Jiang; Manasreh, M. O.; Kunets, Vasyl P.; Lytvyn, P. M.; Salamo, Gregory J.

doi:10.1109/led.2007.915371

Cited by 26 publications

(10 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From these measurements and their interpretation, some indications for the use of metamorphic QDs for IR detection can be highlighted: (i) when using x > 0.15, advanced designs allowing to control strain-related defects should be used, similar to what was done for the development of metamorphic QDs [ 19 , 20 , 37 ]; (ii) multilayer stacks of QDs (with a minimum of 10 layers) are needed to obtain a QD PC above the dark current [ 27 , 56 ]; and (iii) as a higher confinements of heavy holes is beneficial for the photocurrent obtained when exciting QDs, advanced designs with higher-gap barriers for heavy holes could be considered [ 51 , 57 ]. Hence, these findings can be very useful for the design of metamorphic QDs aiming at IR detection and the development of metamorphic QD photodetectors.…”

Section: Resultsmentioning

confidence: 99%

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

et al. 2018

View full text Add to dashboard Cite

Photoelectric properties of the metamorphic InAs/InxGa1 − xAs quantum dot (QD) nanostructures were studied at room temperature, employing photoconductivity (PC) and photoluminescence spectroscopies, electrical measurements, and theoretical modeling. Four samples with different stoichiometry of InxGa1 − xAs cladding layer have been grown: indium content x was 0.15, 0.24, 0.28, and 0.31. InAs/In0.15Ga0.85As QD structure was found to be photosensitive in the telecom range at 1.3 μm. As x increases, a redshift was observed for all the samples, the structure with x = 0.31 was found to be sensitive near 1.55 μm, i.e., at the third telecommunication window. Simultaneously, only a slight decrease in the QD PC was recorded for increasing x, thus confirming a good photoresponse comparable with the one of In0.15Ga0.75As structures and of GaAs-based QD nanostructures. Also, the PC reduction correlate with the similar reduction of photoluminescence intensity. By simulating theoretically the quantum energy system and carrier localization in QDs, we gained insight into the PC mechanism and were able to suggest reasons for the photocurrent reduction, by associating them with peculiar behavior of defects in such a type of structures. All this implies that metamorphic QDs with a high x are valid structures for optoelectronic infrared light-sensitive devices.

show abstract

Section: Resultsmentioning

confidence: 99%

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

et al. 2018

View full text Add to dashboard Cite

show abstract

“…More recently, Chen et al have studied the cytotoxicity of CdTe/CdS (core-shell) structured and also CdTe/CdS/ZnS (core-shell-shell) structured aqueous synthesized QDs, and their results suggest that the cytotoxicity of CdTe QDs not only comes from the release of Cd 2+ ions but also intracellular distribution of QDs in cells and the associated nanoscale effects [ 157 ]. Table 4 demonstrated more results for toxicity of QDs [ 158 - 162 ].…”

Section: Reviewmentioning

confidence: 99%

Quantum dots: synthesis, bioapplications, and toxicity

et al. 2012

View full text Add to dashboard Cite

This review introduces quantum dots (QDs) and explores their properties, synthesis, applications, delivery systems in biology, and their toxicity. QDs are one of the first nanotechnologies to be integrated with the biological sciences and are widely anticipated to eventually find application in a number of commercial consumer and clinical products. They exhibit unique luminescence characteristics and electronic properties such as wide and continuous absorption spectra, narrow emission spectra, and high light stability. The application of QDs, as a new technology for biosystems, has been typically studied on mammalian cells. Due to the small structures of QDs, some physical properties such as optical and electron transport characteristics are quite different from those of the bulk materials.

show abstract

“…As a new functional material, black silicon has drawn worldwide attention in recent years. It is an ideal material used for sensitive photoelectronic detectors [ 16 – 18 ], solar cells, biochemical sensors [ 19 , 20 ], display devices [ 21 , 22 ], and optical communication objects [ 23 ]. Nanostructures of black silicon have been the focus of intense researches in recent years due to their extensive device application and possibility of investigation on 1/f noise [ 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

Zhong

Guo

et al. 2016

Nanoscale Res Lett

View full text Add to dashboard Cite

We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

show abstract

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in $\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$ Multiple Quantum Dot Photodetector

Cited by 26 publications

References 14 publications

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window

Quantum dots: synthesis, bioapplications, and toxicity

The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

Contact Info

Product

Resources

About