Dual waveband infrared detectors using MOVPE grown MCT

McEwen, R. K.; Hipwood, L. G.; Bains, Sudesh; Owton, Dan; Maxey, C. D.

doi:10.1117/12.2518224

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…Despite these limitations, the HgCdTe material is superior to other materials used in infrared detection due to its many advantages [ 3 ]. In addition to the above, wide bandgap tuning range, complete flexibility in donor and acceptor doping concentrations [ 4 , 5 ], high electron mobility, and low dielectric permittivity are valuable advantages. The low variability of the lattice constant with the change in compound composition facilitates the use of energy-gap engineering in the construction of devices.…”

Section: Introductionmentioning

confidence: 99%

“…Currently, the dominant methods for obtaining HgCdTe heterostructures are epitaxial techniques such as liquid-phase epitaxy (LPE) [ 10 ], molecular-beam epitaxy (MBE) [ 4 ], and metal–organic chemical vapour deposition (MOCVD) [ 5 ]. The conducted analyses showed that the MOCVD technology is more suitable for the flexible production of detectors operating at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature

Madejczyk

Manyk

Rutkowski

2023

Sensors

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This paper presents a thorough analysis of the current–voltage characteristics of uncooled HgCdTe detectors optimized for different spectral ranges. HgCdTe heterostructures were grown by means of metal–organic chemical vapor deposition (MOCVD) on GaAs substrates. The obtained detector structures were measured using a Keysight B1500A semiconductor device analyser controlled via LabVIEW for automation. The experimental characteristics were compared with numerical calculations performed using the commercial platform SimuAPSYS (Crosslight). SimuAPSYS supports detector design and allows one to understand different mechanisms occurring in the analysed structures. The dark current density experimental data were compared with theoretical results at a temperature of 300 K for short, medium, and long wavelength infrared ranges. The dark current density of detectors optimized for different wavelengths was determined using various generation–recombination mechanisms. Proper matching between experimental and theoretical data was obtained by shifting the Shockley–Read–Hall carrier lifetime and the Auger–1 and Auger–7 recombination rates. Exemplary spectral responses were also discussed, giving a better insight into detector performance. The matching level was proven with a theoretical evaluation of the zero-bias dynamic resistance–area product (R0A) and the current responsivity of the designed detectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature

Madejczyk

Manyk

Rutkowski

2023

Sensors

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Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors

Vallone

Goano

Tibaldi

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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Towards an optimised 12µm pixel MWIR-LWIR dual waveband structure using MOVPE grown CMT

Greenen,

Reed,

Lee

et al. 2024

Infrared Technology and Applications L

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In 2022, Leonardo UK presented the first results from Condor HD, a 12µm MWIR-LWIR Dual Waveband Infra-Red (DWIR) high-performance infrared detector, grown by Metal Organic Vapour Phase Epitaxy (MOVPE) on GaAs substrates. By using a "back-to-back" diode structure, these pixels are spatially coherent, and changing the bias polarity across the stacked diodes provides sensitivity in the desired waveband (in this configuration MWIR or LWIR). This paper discusses further characterisation and development of the CMT structure, demonstrating improvement to spectral bandwidth, QE and MW defects. Leonardo UK have also performed further dark current measurements and spectral crosstalk measurements on these new wafer designs.Direct MTF characterisation (in both the MWIR and LWIR bands) has enabled confirmation that optical crosstalk between neighbouring pixels in-band is equivalent to that seen on single band MWIR and LWIR devices -results of which are reported herein. Retaining the DWB mesa structure also seen on the 24µm Condor II Detector has been key to this.

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Dual waveband infrared detectors using MOVPE grown MCT

Cited by 4 publications

References 11 publications

Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature

Research on Electro-Optical Characteristics of Infrared Detectors with HgCdTe Operating at Room Temperature

Quantum Efficiency and Crosstalk in Subwavelength HgCdTe Dual Band Infrared Detectors

Towards an optimised 12µm pixel MWIR-LWIR dual waveband structure using MOVPE grown CMT

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