Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Abstract

Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al2O3 induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and VB.

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

“…However, assuming that the surface negative charge is responsible for the formation of hole accumulation would be sufficient for our calculation. Recently, the report that the device simulation using surface negatively charged sheet can reproduce the current‐voltage characteristics of 2DHG based FET by Kawarada et al also validates our assumption. In addition, theory and some experiments show that the hole accumulation layer at the diamond surface is quasi two‐dimensional (2D) .…”

Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction

“…7b. Similar with the two-dimensional hole gas (2DHG) [23], the inversion layer could exhibit the feature of high conduction due to the high sheet concentration of the holes ( p+ ). From Fig.…”

Threshold Voltage Instability of Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors Based on 2D Hole Gas

“…The 2DHG on H‐diamond surface has a low activation energy, a hole density of ≈10 13 cm −2 , and a mobility of ≈100 cm 2 V −1 s . In contrast to boron‐doped p‐type diamond, where the acceptor level is as deep as 0.37 eV, indicating strong temperature dependence, the p‐channel conductivity based on 2DHG of the H‐diamond surface is nearly temperature independent . Metal–oxide–semiconductor field‐effect transistors (MOSFETs) based on 2DHG show the best transistor performance among the diamond transistors from the viewpoints of current density, high transconductance, high frequency operation, and high voltage as of today.…”