Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications

Wang, Gangyao; Mookken, John; Rice, Julius; Schupbach, Marcelo

doi:10.1109/apec.2014.6803502

Cited by 108 publications

(45 citation statements)

References 6 publications

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“…The effectiveness of this particular TSEP should be studied for each MOSFET, especially given the different generations available on the market [7]. This also includes the study of the variability of the on-state resistance for devices of the same technology but different process batches.…”

Section: Discussion On Condition Monitoring and Additional Consideratmentioning

confidence: 99%

“…The gate voltage V GS applied to turn-on the device affects the value of the resistance. This is a well-known fact and is one of the reasons why SiC MOSFETs require a high gate voltage in order to properly invert the channel and obtain a low on-state resistance compared with silicon MOSFETs [6,7], as well as avoiding a negative temperature coefficient, which can cause thermal runaway in case of paralleled devices.…”

Section: Mosfet On-state Resistance Analysismentioning

confidence: 99%

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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

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Condition monitoring using temperature sensitive electrical parameters (TSEPs) is widely recognized as an enabler for health management of power modules. The on-state resistance/forward voltage of MOSFETs, IGBTs and diodes has already been identified as TSEPs by several researchers. However, for SiC MOSFETs, the temperature sensitivity of on-state voltage/resistance varies depending on the device and is generally not as high as in silicon devices. Recently the turn-on current switching rate has been identified as a TSEP in SiC MOSFETs, but its temperature sensitivity was shown to be significantly affected by the gate resistance. Hence, an important consideration regarding the use of TSEPs for health monitoring is how the gate driver can be used for improving the temperature sensitivity of determined electrical parameters and implementing more effective condition monitoring strategies. This paper characterizes the impact of the gate driver voltage on the temperature sensitivity of the on-state resistance and current switching rate of SiC power MOSFETs. It is shown that the temperature sensitivity of the switching rate in SiC MOSFETs increases if the devices are driven at lower gate voltages. It is also shown, that depending on the SiC MOSFET technology, reducing the gate drive voltage can increase the temperature sensitivity of the on-state resistance. Hence, using an intelligent gate driver with the capability of customizing occasional switching pulses for junction temperature sensing using TSEPs, it would be possible to implement condition monitoring more effectively for SiC power devices.

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Section: Discussion On Condition Monitoring and Additional Consideratmentioning

confidence: 99%

Section: Mosfet On-state Resistance Analysismentioning

confidence: 99%

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

View full text Add to dashboard Cite

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“…This fact makes condition monitoring of SiC MOSFETs using TSEPs a challenging task. The temperature dependency of the on-state resistance in SiC is not linear [24] and is low. Fig.…”

Section: Introductionmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

104

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“…As indicated by Equation 4 and Equation 6, bus bar stray inductances in phases U and W can be made equal in the double-sided structure. In addition, comparing Equation 2 and Equation 5, V-phase bus bar stray inductance can be reduced in the double-sided structure so that lower values of bus bar stray inductance can be adopted in design.…”

Section: Proposal Of Circuit Structurementioning

confidence: 99%

“…In so doing, heat dissipation of the power modules must be equalized, and switching loss balancing is a key issue. In this context, a number of studies deal with parallel connection of power modules; thus, influence of characteristics of semiconductor devices was examined, 6 and a method was proposed to reduce switching loss imbalance by improving gate drive circuits. 7,8 In addition, effects of DC-side stray inductance are also reported; particularly, reducing variation of DC-side stray inductance proves effective to suppress switching loss imbalance.…”

Section: Introductionmentioning

confidence: 99%

Development of Inverter Structure for Reducing Switching Loss Imbalance among Parallel Connection and among Three Phases

et al. 2020

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Recently, SiC power devices were developed to reduce the size and weight of the power converter circuit. This paper presents a three-phase inverter structure for reducing imbalances in the switching loss among power modules connected parallel to one another and among the three phases. A proposed double-sided structure achieved an imbalance of less than 2% in the experimental switching loss using SiC power modules. In addition, it is shown that the double-sided structure realized stable switching behavior under four SiC power modules connected in parallel. K E Y W O R D Sparallel connection, silicon carbide, stray inductance, switching loss Electr Eng Jpn. 2020;212:59-66.

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Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications

Cited by 108 publications

References 6 publications

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Development of Inverter Structure for Reducing Switching Loss Imbalance among Parallel Connection and among Three Phases

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