Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Abstract

The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at 410 nm were investigated. LDs were grown on semipolar (202¯1¯) bulk GaN substrates and fabricated into devices with cavity lengths ranging from 900 nm to 1800 nm. A 3-dB bandwidth of 5 GHz and 5 Gbit/s direct modulation with on-off keying were demonstrated, which were limited by the bandwidth of the photodetector used for the measurements. The differential gain of the LDs was determined to be 2.5 ± 0.5 × 10−16 cm2 by comparing the slope efficiency for different cavity lengths. Analysis of the frequency response showed that the K-factor, the gain compression factor, and the intrinsic maximum bandwidth were 0.33 ns, 7.4 × 10−17 cm3, and 27 GHz, respectively.

A tutorial on laser-based lighting and visible light communications: device and technology [Invited]

“…For example, a pulsed high-power AlGaN-cladding-free blue LDs with an optical power of 2.15 W and external quantum efficiency (EQE) of 39% was reported [57]. The InGaN-based LD design and device performance are summarized in Table 2 [1, [58][59][60][61][62][63][64][65][66][67].…”

Light based underwater wireless communications

“…50) Further investigations show that both GaN-based edge emitting laser diodes (EELDs) and vertical-cavity surfaceemitting lasers (VCSELs) exhibit a large modulation bandwidth beyond GHz. 51,52) Though the micro-pixel LEDs (µLEDs) have shown enhanced modulation characteristics compared to the conventional LEDs, their output powers are relatively low, making it less attractive for high brightness applications. 13,53) Therefore, the InGaN-based laser diode became a competitive light emitter for both indoor and outdoor VLC systems.…”

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

“…[1][2][3] In particular, III-nitride VCSELs have attracted much interest owing to their unique emission wavelengths (ultraviolet to green) for attractive applications, such as visible light communication, optical sensors, displays, and atomic clocks. [4][5][6][7][8][9] Reports of III-nitride VCSELs have consisted of hybrid epitaxial=dielectric 10,11) and dual dielectric DBR designs. [7][8][9][12][13][14] Both designs have required intracavity contacts, and indium tin oxide (ITO) has been the most commonly used material to improve lateral current spreading on the p-side.…”