Dynamic Large-Signal I-V Analysis and Non-Linear Modelling of Algan/Gan HEMTS

Chigaeva, E.; Wieser, N.; Walthes, W.; Berroth, Manfred; Roll, H.; Breitschädel, O.; Off, J.; Kuhn, Barbara; Scholz, F.; Schweizer, H.

doi:10.1109/euma.2001.339141

Cited by 2 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[2,9,12,14] However, problems due to dispersion effects and instabilities remain a challenge for these applications. [9,10,13] Dispersion is attributed to presence of traps in the heterostructure, in particular, at the interface which causes deterioration of d.c. and rf characteristics. [6 -11,15] This work aims at investigating trap effects within such structures.…”

Section: Introductionmentioning

confidence: 99%

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Semra

Telia

Soltani³

2010

Surface & Interface Analysis

View full text Add to dashboard Cite

An analysis of frequency dispersion in capacitance and conductance of gate-source contact of AlGaN/GaN HEMT was performed. Capacitance and conductance were measured at temperatures varying from 83 K to 370 K with bias voltage maintained at 0 V. In order to characterize trap states the conductance method was used considering series resistance. Hence, the parallel conductance G p and capacitance C p were calculated, and consequently interface trap density D it and time constant t are deduced. The analysis is performed assuming a continuum of levels yielding to a trap density of approximately 10 +12 cm −2 eV −1 and a time constant varying between 1 µs and 3 ms. Activation energies and capture cross sections of three trap levels were deduced and their values were respectively ( E a1 = 0.201 eV, σ n1 = 4.992 × 10 −18 cm 2 ), ( E a2 = 0.053 eV, σ n2 = 2.585 × 10 −21 cm 2 ), ( E a3 = 0.121 eV, σ n3 = 1.256 × 10 −20 cm 2 ). An electrical model was established with two levels of traps at AlGaN/GaN interface and one level located in barrier AlGaN surface.

show abstract

Section: Introductionmentioning

confidence: 99%

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Semra

Telia

Soltani³

2010

Surface & Interface Analysis

View full text Add to dashboard Cite

show abstract

“…This original model was implemented as a user-defined model in Agilent Advanced Design System (ADS) and has already been applied for AlGaN/GaN-HEMTs. Although dynamic output characteristics were used for the parameter extraction, the first attempt shows the necessity of the selfheating correction [9]. The original large-signal equivalent circuit is divided into two partsthe internal transistor with its non-linear elements and the parasitic network.…”

Section: Ps-11mentioning

confidence: 99%

Advanced large-signal modeling of GaN-HEMTs

Berroth

Chigaeva

Dettmann

et al.

Proceedings. IEEE Lester Eastman Conference on High Performance Devices

Self Cite

View full text Add to dashboard Cite

For improved non-linear modeling of AlGaN/GaN high electron mobility transistors, a largesignal model originally developed for GaAs-based devices has been extended by introduction of a thermal sub-circuit to account for self-heating. Thereby, DC output characteristics which typically show negative output conductance at a high dissipating power level are well reproduced. Since self-heating also effects the transconductance, which is related to S 2 1 at RF conditions, the comparison of broadband S-parameter simulations and measurements revealed significant improvement when using the extended model. First experimental and theoretical investigations on the transient behavior at pulsed conditions are finally presented.

show abstract

Dynamic Large-Signal I-V Analysis and Non-Linear Modelling of Algan/Gan HEMTS

Abstract: ABSTRACT

Cited by 2 publications

References 7 publications

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Advanced large-signal modeling of GaN-HEMTs

Contact Info

Product

Resources

About