Dynamic scenarios of multistable switching in semiconductor superlattices

Amann, Andreas; Wacker, A.; Bonilla, Luis L.; Schöll, Eckehard

doi:10.1103/physreve.63.066207

Cited by 51 publications

(122 citation statements)

References 26 publications

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“…We observe a current signal which is constant in average and exhibits fast oscillations with the period c/d due to well-to-well hopping of the accumulation front. This feature has been discussed in the analysis of switching behavior [199][200][201] and is explained in detail in [185].…”

Section: Self-sustained Current Oscillationsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance. 2 Notation and list of symbolsThroughout this work we consider a superlattice, which is grown in the z direction. Vectors within the (x, y) plane parallel to the interfaces are denoted by bold face letters k, r, while vectors in 3 dimensional space are r, k, . . . . All sums and integrals extend from −∞ to ∞ if not stated otherwise.The following relations are frequently used in this work and are given here for easy reference:

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Section: Self-sustained Current Oscillationsmentioning

confidence: 99%

Semiconductor superlattices: a model system for nonlinear transport

2002

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“…For details of the microscopic calculation of J m→m+1 we refer to the literature [Amann et al, 2001;Wacker, 2002]. A typical dependence of J m→m+1 on the electric field between two consecutive wells is N -shaped and exhibits a pronounced regime of negative differential conductivity, as shown in Fig.1…”

Section: Model Equationsmentioning

confidence: 99%

Noise-Induced Oscillations and Their Control in Semiconductor Superlattices

Hizanidis

Balanov

Amann

et al. 2006

Int. J. Bifurcation Chaos

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We consider noise-induced charge density dynamics in a semiconductor superlattice.The parameters are fixed in the regime below the Hopf bifurcation that gives birth to spatio-temporal oscillations, where in the absence of noise the system rests in a fixed point. It is shown that in this case noise can induce in the superlattice quite coherent oscillations of the current through the device. While the regularity of these oscillations depends on the noise intensity, their dominant frequency remains almost constant with variation of the noise level in the system. Further, we demonstrate that a time-delayed feedback scheme that was previously used to control purely temporal oscillations induced by noise, can not only enhance or deteriorate the regularity of stochastic spatio-temporal patterns but also allows for the manipulation of the system's time scales with varying time delay.

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“…Branches exhibit hysteresis cycles due to coexistence of two or more stable electric field profiles at a given value of the voltage. Many interesting dynamical phenomena are associated to these SL: (i) response of the SL to sudden changes in bias (which may force relocation of electric field domains [3][4][5][6]), and (ii) self-sustained oscillations of the current provided temperature is raised or doping is lowered [7,8]. Motivated by recent experimental evidence [9,10], we shall present in this paper a stochastic theory of domain relocation in highly doped SL.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear stochastic discrete drift-diffusion theory of charge fluctuations and domain relocation times in semiconductor superlattices

2002

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A stochastic discrete drift-diffusion model is proposed to account for the effects of shot noise in weakly coupled, highly doped semiconductor superlattices. Their current-voltage characteristics consist of a number stable multistable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and a sudden voltage is switched so that the final voltage corresponds to the next branch, the domains relocate after a certain delay time. Shot noise causes the distribution of delay times to change from a Gaussian to a first passage time distribution as the final voltage approaches that of the end of the first current branch. These results agree qualitatively with experiments by Rogozia et al (Phys. Rev. B 64, 041308(R) (2001)

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Dynamic scenarios of multistable switching in semiconductor superlattices

Cited by 51 publications

References 26 publications

Semiconductor superlattices: a model system for nonlinear transport

Semiconductor superlattices: a model system for nonlinear transport

Noise-Induced Oscillations and Their Control in Semiconductor Superlattices

Nonlinear stochastic discrete drift-diffusion theory of charge fluctuations and domain relocation times in semiconductor superlattices

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