1999
DOI: 10.1143/jjap.38.7176
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Dynamic Simulation of Electron-Beam-Induced Chargingup of Insulators

Abstract: The time-dependent charging process of an insulating specimen under electron beam irradiation is calculated by taking into account the charge continuity equation, the Poisson equation, Ohm's law and the electron-beam-induced conductivity. The energy and the charge deposition distributions are calculated by the Monte Carlo simulation of electron trajectories taking into account the electric field distribution in the specimen. The time-dependent charge and potential distributions are obt… Show more

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Cited by 44 publications
(32 citation statements)
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“…The description is macroscopic, and only electrons are considered. Several versions of the model are available in [11][12][13]. The advantages of this description are its simplicity, and the possibility to experimentally determine most of the parameters.…”
Section: Theoretical Background and Evidence Of Bipolar Processesmentioning
confidence: 99%
“…The description is macroscopic, and only electrons are considered. Several versions of the model are available in [11][12][13]. The advantages of this description are its simplicity, and the possibility to experimentally determine most of the parameters.…”
Section: Theoretical Background and Evidence Of Bipolar Processesmentioning
confidence: 99%
“…In this study, elastic scattering, inner-shell electron ionization and longitudinal phonon excitation are considered for electron phenomena occurred in the poly methyl methacrylate (PMMA) resist. 17,18 In Si wafer, elastic scattering, inner-shell ionization, conduction band electron ionization, bulk plasmon excitation and its decay are considered. 19 In the simulation procedure, first, the resist is divided into virtual cells with the size of 5 ϫ 5 ϫ 5 nm.…”
Section: Simulation Results and Discussionmentioning
confidence: 99%
“…The single scattering model [1] was used to calculate the absorbed energy distribution, a model of secondary electron production [13] was used to determine the deposited charge distribution.…”
Section: Simulation Modelmentioning
confidence: 99%
“…A positive charge was deposited at the position where a secondary electron was generated, and a negative charge was deposited at the position where an electron stops in the sample. The charge drift in the sample was simulated by taking into account the Poisson equation, the charge continuity equation, Ohm's law, and the radiation-induced conductivity [13,17,18]. Figure 7 shows the surface potential distribution of the PMMA resist on a Si substrate during electron exposure at 0.…”
Section: Charging Effectmentioning
confidence: 99%