Dynamic surface potential decay tendency of cellular polypropylene after temperature control corona process

Zhang, J. W.; Chen, X.; Belouadah, Rabah; Zhou, Tao; Yin, Chao; Shi, Yongmin; Niu, Yongan

doi:10.1179/1432891715z.0000000001492

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…Nowadays, magnetoresistive random-access memory (MRAM) as one of the non-volatile memory devices has long been of interest for its potential applicability in space exploration. [1][2][3][4][5][6][7][8][9][10] Embedding the magnetic memory cell in the complementary metal-oxide-semiconductor (CMOS) circuit back-end process is the way to achieve MRAM devices. [11] The magnetic tunneling junction (MTJ) in the device is the core component used for data storage.…”

Section: Introductionmentioning

confidence: 99%

Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices

et al. 2017

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The 1-Mb and 4-Mb commercial toggle magnetoresistive random-access memories (MRAMs) with 0.13 µm and 0.18µm complementary metal-oxide-semiconductor (CMOS) process respectively and different magnetic tunneling junctions (MTJs) are irradiated with a Cobalt-60 gamma source. The electrical functions of devices during the irradiation and the room temperature annealing behavior are measured. Electrical failures are observed until the dose accumulates to 120-krad (Si) in 4-Mb MRAM while the 1-Mb MRAM keeps normal. Thus, the 0.13-µm process circuit exhibits better radiation tolerance than the 0.18-µm process circuit. However, a small quantity of read bit-errors randomly occurs only in 1-Mb MRAM during the irradiation while their electrical function is normal. It indicates that the store states of MTJ may be influenced by gamma radiation, although the electrical transport and magnetic properties are inherently immune to the radiation. We propose that the magnetic Compton scattering in the interaction of gamma ray with magnetic free layer may be the origin of the read bit-errors. Our results are useful for MRAM toward space application.

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