Dynamical behaviour of the resistive switching in ceramic YBCO/metal interfaces

Abstract

Studies related to the dynamics of resistive switching (RS) in ceramic YBCO/metal interfaces were performed. The change in interface resistance during the application of square pulses and its current-voltage (I -V ) characteristics were measured. The obtained non-linear current dependence of the differential resistance can be very well reproduced by modelling the electrical behaviour of the interface with simple circuit elements. The RS produces defined changes in the parameters of the circuit model that reveal the particular dynamics of the mechanism beneath the resistance change in complex oxide/metal interfaces.

The measurement of the diffusion coefficient of oxygen ions in the YBa2Cu3O7-x layer of the electro-resistance memory

“…40Ω). Such non-linearity of resistance for structures based on YBa 2 Cu 3 O 7-x was presented both in our papers [9,18] and in the work of other authors [21]. The reason for this lies in the mechanism of electric conductivity of carriers induced from trap levels, just O 2ions (Poole-Frenkel mechanism) [22,23].…”

Graphical analysis of current-voltage characteristics in memristive interfaces

“…Other circuit representations of memristors can be found elsewhere. [14][15][16][17] The convenience of this circuit to describe the behavior of memristive interfaces was tested by reproducing the dynamical behavior of metal-YBCO interfaces [10] as well as by capturing the non-trivial IV characteristics of metal-manganite junctions [11]. In the case of devices with non-negligible bulk resistance, a second ohmic element in series (R 2 ) should be considered.…”

SPICE simulation of memristive circuits based on memdiodes with sigmoidal threshold functions

“…The transport equation of the device can be found from two identical opposite‐biased diodes in series with a resistor (Figure a) as proposed in Miranda et al . and Acha . An approximate solution for this system, neglecting the inverse saturation currents, is given by with ϕ = α R s I 0 , where I 0 is the current amplitude factor, α a parameter related to the specific physical conduction mechanism, R s the series resistance, and W the Lambert function.…”

“…The transport equation of the device can be found from two identical opposite-biased diodes in series with a resistor (Figure 1a) as proposed in Miranda et al and Acha [16,17]. An approximate solution for this system, neglecting the inverse saturation currents, is given by [18]…”