Dynamics of extremely anisotropic etching of InP nanowires by HCl

Borgström, Magnus T.; Wallentin, Jesper; Kawaguchi, Kenichi; Samuelson, Lars; Deppert, Knut

doi:10.1016/j.cplett.2010.12.061

Cited by 17 publications

(21 citation statements)

References 21 publications

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“…[19][20][21][22] In situ etching allows for control over the axial and radial nanowire growth rate. [23][24][25][26] In situ etching of Indium Phosphide (InP) nanowires by the use of Hydrogen Chloride (HCl) was found to suppress radial growth and improve the morphology and photoluminescence (PL) of the nanowires. 23,27 Furthermore, the HCl etching influences the nanowire surface morphology and reduces defect incorporation 23,28 that occurs due to low temperature parasitic radial growth.…”

Section: Introductionmentioning

confidence: 99%

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Zeng

Němec

et al. 2019

Nanoscale

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Section: Introductionmentioning

confidence: 99%

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Zeng

Němec

et al. 2019

Nanoscale

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“…Hydrogen Chloride (HCl) is also used to control the morphology of the layer growth 30 (see Supporting Information S2 for details).. HCl has two important effects on the shell growth 2,4,[31][32][33][34][35] . Firstly, it etches material from the nanowire surfaces, preferentially etching Indium over Gallium 36 .…”

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confidence: 99%

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In_xGa_1–xP Core–Shell Nanowires

et al. 2016

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Thanks to their uniqueness, nanowires allow the realization of novel semiconductor crystal structures with yet unexplored properties, which can be key to overcome current technological limits. Here we develop the growth of wurtzite GaP/InGaP core-shell nanowires with tunable indium concentration and optical emission in the visible region from 590 nm (2.1 eV) to 760 nm (1.6 eV). We demonstrate a pseudodirect (Γ-Γ) to direct (Γ-Γ) transition crossover through experimental and theoretical approach. Time resolved and temperature dependent photoluminescence measurements were used, which led to the observation of a steep change in carrier lifetime and temperature dependence by respectively one and 3 orders of magnitude in the range 0.28 ± 0.04 ≤ x ≤ 0.41 ± 0.04. Our work reveals the electronic properties of wurtzite InGaP.

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“…In the InP NW growth that was previously reported, the NW diameter decreased with increasing HCl flow rate. Its mechanism involves the vapor‐phase etching reaction, which consists of the formation of InCl species and desorption, and reaction block by Cl surface termination of NW sidewalls . To understand the uncommon HCl dependence observed for InAs NW growth, we extracted the differences between the condition used in this work and previous InP NW growth studies.…”

Section: Resultsmentioning

confidence: 99%

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

Kawaguchi

Takahashi

Okamoto

et al. 2018

Physica Status Solidi (a)

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Position-controlled vapor-liquid-solid (VLS) growth of nanowires (NWs)is investigated using GaAs substrates with SiN-patterned masks and Au catalysts for the realization of axial GaAsSb/InAs heterostructures. Rod-like InAs NWs are obtained by the introduction of a small amount of HCl gas. The InAs NW diameter depends on the Au catalyst size and pitch of NWs, which can be explained by the VLS growth accompanied by lateral growth. A peculiar change in NW shapes for additive HCl gas is also revealed. Moreover, the formation of axial GaAsSb/InAs heterostructure NWs, by controlling the growth temperature of GaAsSb segments is demonstrated. These results indicate that this growth method is promising for the development of NWs suitable for vertical nano-scale devices with Sb-containing heterostructures. Experimental SectionPatterned substrates were fabricated using EB lithography and a lift-off process. First, a 50-nm-thick SiN film was deposited on a GaAs(111)B substrate. EB resist was then coated on the SiN surface, and two-dimensionally arrayed circular holes with diameters of 40-80 nm were developed on the resist using EB

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Dynamics of extremely anisotropic etching of InP nanowires by HCl

Cited by 17 publications

References 21 publications

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In_xGa_1–xP Core–Shell Nanowires

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

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Dynamics of extremely anisotropic etching of InP nanowires by HCl

Cited by 17 publications

References 21 publications

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Effect of hydrogen chloride etching on carrier recombination processes of indium phosphide nanowires

Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/InxGa1–xP Core–Shell Nanowires

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

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Pseudodirect to Direct Compositional Crossover in Wurtzite GaP/In_xGa_1–xP Core–Shell Nanowires