Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors

Jenkins, I. G.; Song, Tian‐shun; Madhukar, S.; Prakash, Amit; Aggarwal, S.; Ramesh, R.

doi:10.1063/1.121630

Cited by 38 publications

(24 citation statements)

References 8 publications

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“…The results indicate that no significant difference exists in the polarization relaxation behavior of bulk material and that observed in thin films. 29,30 Similar to the thin films, in the bulk MAPBB crystal an initial drop of the polarization is observed which then levels out to a slow decrease, fitted by a stretched-exponential function.…”

Section: Discussionmentioning

confidence: 85%

Effect of internal bias field on domain switching in (CH3NH3)5Bi2Br11 crystal

Matyjasek

Rogowski

2006

Journal of Applied Physics

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In this report we investigate the microscopic features of 180° domain wall dynamics and relate its dynamics to the defect structure in unipolar methylammonium bromobismuthate, (CH3NH3)5Bi2Br11, single crystal. The switching and spontaneous backswitching processes have been studied by observation of domain structure by using nematic liquid crystal method and by switching current registration. We found a two-step relaxation decay of polarization induced by Eb; the fast one decays on the time scale of milliseconds, while the slow one lasts over seconds. In the late-time regime, the stretched-exponential function was used as an empirical fit of relaxation data.

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Section: Discussionmentioning

confidence: 85%

Effect of internal bias field on domain switching in (CH3NH3)5Bi2Br11 crystal

Matyjasek

Rogowski

2006

Journal of Applied Physics

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“…This indicates that there was a significant polarization decay in Pt/PZT/Pt capacitor within 1s. This phenomenon was widely observed [26][27][28] for PZT thin films. A significant improvement of the retained polarization for Mn-doped PZT was obtained over a retention time of 30000s.…”

Section: Resultsmentioning

confidence: 95%

Improved Ferroelectric Properties in Mn-Doped PZT Thin Films

Zhang

Whatmore

2003

Integrated Ferroelectrics

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We have investigated the effects of Mn doping on the ferroelectric properties of Pb(Zr 0.3 Ti 0.7 )O 3 (PZT) thin films on substrates Pt/Ti/SiO 2 /Si. The Mn-doped (1 mol%) PZT (PMZT) showed almost no hysteretic fatigue up to 10 10 switching bipolar pulse cycles, coupled with excellent retention properties. We present evidence that while a low permittivity interfacial layer forms between the Pt electrode and PZT films, this does not occur in PMZT. We propose that Mn dopants are able to reduce oxygen vacancy mobility in PZT films and Mn 2+ ions consume the oxygen vacancies generated during repeated switching, forming Mn 4+ ions. These mechanisms are probably responsible for their low observed fatigue characteristics.

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“…This is sometimes referred to as retention loss, and is widely studied in thin films. [13][14][15][16] Some of the recent studies on polarization relaxation focused on the physical origins of the relaxation kinetics during polarization reversal. Different retention studies covered different time frames, from very short times (tϽ1 s) to long times (tϾ1 s).…”

Section: Introductionmentioning

confidence: 99%

Polarization relaxation anisotropy in Pb(Zn1/3Nb2/3)O3-PbTiO3 single-crystal ferroelectrics as a function of fatigue history

Ozgul

Furman

Trolier-McKinstry

et al. 2004

Journal of Applied Physics

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Polarization relaxation was studied in Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) single crystals that show fatigue anisotropy. To excite prepoled crystals, a modest dc voltage (<1/2 of the coercive field) was applied along the poling direction. Upon removal of the voltage, the polarization decay in the time domain was measured. Experimental data were modeled with a stretched exponential function. Stretching exponent (β〈hkl〉) and characteristic time (τ〈hkl〉) constants for polarization relaxation were determined from data over four decades in the time domain at different stages of bipolar cycling. β〈hkl〉 values after 101 cycles were 0.146±0.002 and 0.247±0.0004 in the 〈001〉 and 〈111〉 orientations, respectively. The β〈111〉 constant increased up to 0.453±0.104 after 105 cycles in 〈111〉 oriented crystals that show fatigue. However, much less change is observed in β〈001〉 as a function of cycling for 〈001〉 crystals. Characteristic time constants for relaxation (τ〈hkl〉) were calculated for 〈001〉 and 〈111〉 orientations as 0.401±0.048 s and 57.46±0.10 s, respectively. These results suggest a faster polarization relaxation in 〈001〉 than in the 〈111〉 orientation of rhombohedral PZN-PT ferroelectric crystals.

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Dynamics of polarization loss in (Pb, La)(Zr, Ti)O3 thin film capacitors

Cited by 38 publications

References 8 publications

Effect of internal bias field on domain switching in (CH3NH3)5Bi2Br11 crystal

Effect of internal bias field on domain switching in (CH3NH3)5Bi2Br11 crystal

Improved Ferroelectric Properties in Mn-Doped PZT Thin Films

Polarization relaxation anisotropy in Pb(Zn1/3Nb2/3)O3-PbTiO3 single-crystal ferroelectrics as a function of fatigue history

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