Improved Ferroelectric Properties in Mn-Doped PZT Thin Films

Zhang, Qi; Whatmore, R. W.

doi:10.1080/10584580390254132

Cited by 3 publications

(2 citation statements)

References 24 publications

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“…The dielectric and piezoelectric properties for 0.2PMT–0.2PZ–0.4PT ceramics were found to decrease with increasing manganese levels, while the mechanical quality factor Q and coercive field were found to increase with increasing manganese addition. It is well known that manganese coexists mainly in the Mn 2+ and Mn 3+ states in the PZT system, which may enter into the lattice structure to substitute B‐site Ti 4+ and/or Zr 4+ ions, 20,21 which will generate oxygen vacancies, consequently pinning the domain wall movement, producing a hardening effect in the PMT–PZ–PT ternary system 22 . The mechanical quality factor Q m was found to be on the order of 75 for the pure sample, increasing up to 2000 when the manganese dopant level was about 0.5 wt%, with comparable piezoelectric coefficients ( d 33 ∼500 pC/N) and electromechanical coupling factors ( k p =58% and k t =52%).…”

Section: Resultsmentioning

confidence: 99%

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System

Hao

Zhang

Shrout

2008

Journal of the American Ceramic Society

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Morphotropic phase boundary (MPB) compositions separating rhombohedral and tetragonal phases in the (1ÀxÀy)Pb(Mg 1/3 Ta 2/3 )O 3 -yPbZrO 3 -xPbTiO 3 (PMT-PZ-PT100x) ternary solid solution system were characterized using X-ray diffraction and dielectric, piezoelectric properties. This work focused on compositions with a PZ content fixed at y 5 0.2, with an MPB composition found to be located at x 5 0.4. Piezoelectric coefficients and dielectric permittivity were found to be on the order of d 33 5 580 pC/ N and 4100, respectively. Acceptor modification using manganese was found to induce a ''hardening'' effect in 0.4PMT-0.2PZ-0.4PT, with decreased piezoelectric coefficients d 33 and dielectric loss and increased mechanical quality factor Q. Piezoelectric coefficients d 33 , Q values, and dielectric loss were found to be 500 pC/ N, 2000, and 0.4%, respectively, for 0.4PMT-0.2PZ-0.4PT with MnO 2 dopant levels around 0.5 wt%. The figure of merit (product of Q and d 33 ) was found to be on the order of 1 Â 10 6 , significantly higher when compared with other hard piezoelectric PZT materials. Specifically, the PMT-PZ-PT materials may be attractive candidates for high-power ultrasonic applications, particularly fine-scale components that require relating high permittivities.

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Section: Resultsmentioning

confidence: 99%

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System

Hao

Zhang

Shrout

2008

Journal of the American Ceramic Society

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“…Thus it is widely used in flame and fire detection [1][2][3]. Arrays of such detectors, comprising a pyroelectric material interfaced to an application specific integrated circuit for signal amplification and read out, provide an attractive solution to the problem of collecting spatial information on the IR distribution in a scene.…”

Section: Introductionmentioning

confidence: 99%

Pyroelectric properties of ZnO-based nanostructured polycrystalline ceramics

et al. 2009

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Pyroelectric materials take the most important role in pyroelectric infrared detectors. A high temperature above 550 °C is required to obtain the traditional pyroelectric films such as PZT, BST, etc., which would hold back the realization of integration of pyroelectric thin film monolithic uncooled focal plane array (UFPA). Zinc oxide (ZnO) has been studied widely in recent years because of its excellent semiconducting, optical, piezoelectric and pyroelectric multiple properties. All these imply its potential applications in photo-catalysis, composite materials, dye-sensitized solar cells, sensors, as well as in UFPA applications. In the wurtzite structure of ZnO, it is easy to replace Zn by doping other metal elements such as Al, Ga, In, Sn, Cr, Mg, etc. for tailoring its properties. Thus an ideal preparation method is demanded to easily control the particle size, size distribution, crystallinity and morphology. On the other hand, the structureperformance relationship of ZnO in pyroelectric applications is still not clear. In the present work, we developed a surfactant-assisted complex sol-gel method, which allows easily control of the particle size, size distribution, crystallinity, morphology and doping of ZnO nanoparticles. Two types of ZnO nanoparticles including pure ZnO and magnesium doped ZnO were prepared for our investigation. Their detailed morphology, structural, optical properties would be presented. Pure wurtzite structure was obtained after 500 °C calcinations for the sample with the Mg concentration in Mg x Zn 1-x O below 10 at%. Well dispersed ZnO-based nanoparticles with uniform size distribution were obtained using PEG 2000 as a surfactant. The as-obtained ZnO-based nanoparticles were also sintered for pyroelectric property test. Their pyroelectric properties were compared in order to reveal its possible applications as target materials for pyroelectric films preparation in infrared detector arrays.

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Enhanced radiation tolerance in Mn-doped ferroelectric thin films

Brewer

Williams

Griffin

et al. 2017

Applied Physics Letters

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This work investigates the role of Mn-doping of ferroelectric lead zirconate titanate (PZT) thin films exposed to a range of ionizing radiation doses. PZT thin films were fabricated with both undoped and 4% Mn-doped compositions, and the functional response was compared both before and after exposure to gamma radiation doses up to 10 Mrad. A phenomenological model was applied to quantify defect interactions and compare trends in the degradation of the functional response. Mn-doped PZT samples demonstrate reduced magnitude of functional response in non-irradiated samples but exhibit vastly superior radiation tolerance of dielectric and ferroelectric properties across the range of gamma doses studied here. Strong MnZr/Ti″−VO·· defect dipoles pin domain walls, resulting in a lower initial functional response and mitigating the deleterious effects of irradiation on extrinsic contributions to the said response. Piezoelectric response trends as a function of radiation dose are highly nonlinear. The results of this work can be leveraged to engineer next-generation radiation-tolerant ferroelectric materials for applications where high levels of functional response stability are required, especially at elevated ionizing radiation dose.

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Improved Ferroelectric Properties in Mn-Doped PZT Thin Films

Cited by 3 publications

References 24 publications

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System

Pyroelectric properties of ZnO-based nanostructured polycrystalline ceramics

Enhanced radiation tolerance in Mn-doped ferroelectric thin films

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Improved Ferroelectric Properties in Mn-Doped PZT Thin Films

Cited by 3 publications

References 24 publications

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg1/3Ta2/3)O3−0.2PbZrO3−xPbTiO3 Ternary System

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg1/3Ta2/3)O3−0.2PbZrO3−xPbTiO3 Ternary System

Pyroelectric properties of ZnO-based nanostructured polycrystalline ceramics

Enhanced radiation tolerance in Mn-doped ferroelectric thin films

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Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System

Dielectric and Piezoelectric Properties of the Morphotropic Phase Boundary Composition in the (0.8−x) Pb(Mg_1/3Ta_2/3)O₃−0.2PbZrO₃−xPbTiO₃ Ternary System