Early failure model analysis and improvement of the upstream electromigration in 45nm Cu low-k interconnects

Via Impact on the Upstream Electromigration of 40/45nm Low-k Cu Interconnect

“…It can be observed from Figure 1 that there is only one early failure for V4U with BL via height; when via height adds 100%, early failure number increases to three. It was reported that via deposition becomes bad when via height increases, because argon sputters uneven copper seed on the inside wall of via (1). This explains that early fail number increases with via height.…”

“…EM is one of the major reliability concerns on back-end of line process reliability. Upstream EM has been widely explored for its potential early failure due to poor depositon of via caused by factors of bad adhension, integrity, mechanical stress, and so on (1). It was also reported that barrier coverage inside via is a significant factor on upstream EM reliability (2).…”

“…10.1149/06001.0933ecst ©The Electrochemical Society ECS Transactions, 60 (1) 933-937 (2014)100%, early failure number increases to three. It was reported that via deposition becomes bad when via height increases, because argon sputters uneven copper seed on the inside wall of via(1). This explains that early fail number increases with via height.…”