Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJF<sup>−1</sup> Broadband Amplifier

Poluri, Nagaditya; Souza, M.M. De

doi:10.1109/lmwc.2022.3209573

Cited by 6 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar to [2] and [3], a lowfrequency I-V load-line is used to evaluate performance degradation of microwave transistor [24]. In addition, dynamic load-line is used in the design of narrowband and broadband amplifier designs [25] and [26]. This work presented here is based on a load-line analysis software, which can provide linear/nonlinear power and distortion performances.…”

Section: Comparative Analysismentioning

confidence: 99%

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

Itoh¹,

Takano²,

Matsunaga³

2023

J. Engg. Res. & Sci.

View full text Add to dashboard Cite

An advanced load-line analysis software is devised for nonlinear circuit design and simulation of microwave low-distortion, high-efficiency and high-power GaN HEMT amplifiers. A single software package can incorporate DC, small-and large-signal performances of GaN HEMT devices, and then analyze nonlinear performance of amplitude-to-amplitude (AM-AM) and amplitude-to-phase (AM-PM) modulations, and finally evaluate intermodulation distortion (IMD) and error vector measurement (EVM). High speed and high accurate simulation become available with the use of behavioral modeling for representing nonlinear performance of GaN HEMT devices. In addition, the software employs a time-domain analysis using time-varying electrical waveform and thus give clear and deep insight into the nonlinear behavior of GaN HEMT devices as well as the nonlinear circuit design technique of low-distortion and high-efficiency amplifiers. In comparison with the harmonicbalance (HB) method, comparable performances have been successfully achieved for an L-band 10W GaN HEMT amplifier.

show abstract

Section: Comparative Analysismentioning

confidence: 99%

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

Itoh¹,

Takano²,

Matsunaga³

2023

J. Engg. Res. & Sci.

View full text Add to dashboard Cite

show abstract

Input–output waveform engineered inverse Class F power amplifiers with high efficiency

Zhu,

Cheng,

Jia

et al. 2024

Circuit Theory & Apps

View full text Add to dashboard Cite

This paper studies the influence of the gate voltage of the power amplifier (PA) on the drain current and efficiency. This study proposes a theory of controlling input non‐linearity to improve the efficiency of PAs. The theoretical efficiency of the inverse Class F PA that controls the input nonlinearity is within the range of 77% to 97%. A new design method for the inverse Class F PA reconstructs the design of the load admittance space into a region instead of a point. To verify the validity of the proposed theory, an inverse Class F PA is designed and fabricated using a commercial 10 W GaN high electron mobility transistor (HEMT). Results of the measurement show a high drain efficiency (DE) of 78.5%, an output power of 41.6 dBm, and a large signal gain of 12.1 dB at 1.5 GHz. The overall PA's size is controlled at 80*50 .

show abstract

Automated Power Amplifier Design Through Multiobjective Bottom-Up and Particle Swarm Optimizations Using Neural Network

Kouhalvandi

Matekovits

2022

Springer Proceedings in Physics

View full text Add to dashboard Cite

Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJF⁻¹ Broadband Amplifier

Cited by 6 publications

References 20 publications

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

Input–output waveform engineered inverse Class F power amplifiers with high efficiency

Automated Power Amplifier Design Through Multiobjective Bottom-Up and Particle Swarm Optimizations Using Neural Network

Contact Info

Product

Resources

About

Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJF−1 Broadband Amplifier

Cited by 6 publications

References 20 publications

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

An Advanced Load-Line Analysis Software for use in the Design and Simulation of Microwave Low-Distortion, High-Efficiency and High-Power GaN HEMT Amplifiers

Input–output waveform engineered inverse Class F power amplifiers with high efficiency

Automated Power Amplifier Design Through Multiobjective Bottom-Up and Particle Swarm Optimizations Using Neural Network

Contact Info

Product

Resources

About

Ease of Matching a Load Line Impedance in a 25 W Contiguous Mode Class BJF⁻¹ Broadband Amplifier