Echelle grating silicon multi/demultiplexers with single-reflection total internal reflectors

Park, Sahnggi; Kim, Sang‐Gi; Park, Jeagyu; Kim, Gyungock

doi:10.1364/oe.20.023582

Cited by 6 publications

(4 citation statements)

References 6 publications

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“…Up to date, there are many researches on developing various functional silicon photonics devices, such as, waveguides [3,4], modulators [5][6][7], photodetectors [5,[7][8][9], wavelength division multiplexing (WDM) devices [10,11], and so on. In fact, most of those previous silicon photonics devices were mainly demonstrated on silicon-oninsulator (SOI) substrates, because it easily provides optical waveguides by applying a single-crystalline silicon layer on a buried-oxide (BOX) layer.…”

Section: Introductionmentioning

confidence: 99%

Device characterization of the VCSEL-on-silicon as an on chip light source

et al. 2016

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Advancement of silicon photonics technology can offer a new dimension in data communications with un-precedent bandwidth. Increasing the integration level in the silicon photonics is required to develop compact high-performance chip-level optical interconnects for future systems. Especially, monolithic integration of light source on a silicon wafer is important for future silicon photonic integrated circuits, since realizing a compact on-chip light source on a silicon wafer is a serious issue which impedes practical implementation of the silicon photonic interconnects. At present, due to the lack of a practical light source based on Group IV elements, flip chip-bonded or packaged lasers based on III-V semiconductor are usually being used as external light sources, to feed silicon modulators on SOI wafers to complete a photonic transmitter, except the reported silicon hybrid lasers monolithic-integrated on SOI wafers. To overcome above problem, we have proposed a compact on-chip light source, the directly monolithic-integrated VCSEL on a bulk silicon wafer (VCSEL-on-Si), based on the transplanted epitaxial film by substrate lift-off process and following devicefabrication on the bulk Si wafer. This can offer practical low-power-consumption light sources integrated on a silicon wafer, which can provide a complete chip-level I/O set when combined with monolithic-integrated vertical-illumination Ge-on-Si photodetectors on the same silicon wafer. In this work, we report the characterization of direct-modulation VCSELs-on-Si for λ ~850 nm with CW optical output power > ~2 mW and the threshold current < ~3 mA, over 10 Gb/s operations. We also discuss about the thermal characteristics of the VCSELs-on-Si.

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Section: Introductionmentioning

confidence: 99%

Device characterization of the VCSEL-on-silicon as an on chip light source

et al. 2016

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“…All of these techniques use Mach-Zehnder modulators (MZMs), based on a phase-modulated interferometer, for their EO conversion at the transmitter because the environmental and fabrication sensitivities of the MZMs are much less stringent than those of resonant modulators. The CWDM optical multiplexers use a more tolerant filter structure than the ring resonators, either using ladder filters [22] or Echelle gratings [23] for their optical multiplexers and demultiplexers. However, for 400 Gb/s and 1000 Gb/s (1 Tb/s) data rates, resonant approaches could find their way into near-term (before year 2020) transceiver products if they can be made cost effectively in a way that allows them to operate over extended temperature ranges.…”

Section: Silicon Photonics Introductionmentioning

confidence: 99%

Silicon photonics platform for national security applications

Lentine

DeRose

Davids

et al. 2015

2015 IEEE Aerospace Conference

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We review Sandia's silicon photonics platform for national security applications. Silicon photonics offers the potential for extensive size, weight, power, and cost (SWaP-c) reductions compared to existing III-V or purely electronics circuits. Unlike most silicon photonics foundries in the US and internationally, our silicon photonics is manufactured in a trusted environment at our Microsystems and Engineering Sciences Application (MESA) facility. The Sandia fabrication facility is certified as a trusted foundry and can therefore produce devices and circuits intended for military applications. We will describe a variety of silicon photonics devices and subsystems, including both monolithic and heterogeneous integration of silicon photonics with electronics, that can enable future complex functionality in aerospace systems, principally focusing on communications technology in optical interconnects and optical networking.

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“…[12] These advantages make SOI a promising and important candidate in research and applications for WDM systems. A planar concave grating with 20 nm wavelength spacing [13] and an echelle grating utilizing total internal reflector facets with 12 nm spacing [14] have been demonstrated on nano-photonic SOI platforms.…”

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confidence: 99%

“…[12] The loss is composed of the Fresnel reflection loss at the grating facets and the loss introduced by the grating profile imperfections as facet corner rounding and surface roughness. There is promise in achieving a 3-5 dB transmission enhancement if some improvement is taken to increase the reflectivity of the grating facets, such as metal coating, making TIR-type facets [14,25] or DRB-type facets. [13] The peak variation of 2.6 dB is attributed mainly to the instability of the coupling efficiency of the shallow etched grating coupler, which is very sensitive to the accuracy and stability of manufacturing.…”

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confidence: 99%

An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

Shen¹,

Qiu²,

Hu³

et al. 2013

Chinese Phys. Lett.

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An eight-channel 400 GHz-spacing planar waveguide multi/demultiplexer employing etched diffraction grating is designed and fabricated on a silicon-on-insulator platform with a 220 nm thick top layer. The design parameters are optimized by scalar diffraction simulation to obtain optimal performance with a small footprint of only 0.75 mm 2 . A bi-level adiabatic taper is used to connect the input/output waveguide and the slab waveguide so as to reduce the insertion loss and the broadening of the diffraction angle of the propagating light. The device is fabricated in a two-step process with E-beam lithography and dry etching, and the alignment accuracy is 10 nm or even better. Measurements show that the insertion loss is 7.35 dB and the crosstalk between adjacent channels is about −15 dB. Ways to improve the performance are also investigated in detail.

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Echelle grating silicon multi/demultiplexers with single-reflection total internal reflectors

Cited by 6 publications

References 6 publications

Device characterization of the VCSEL-on-silicon as an on chip light source

Device characterization of the VCSEL-on-silicon as an on chip light source

Silicon photonics platform for national security applications

An Eight-Channel 400 GHz-Spacing Etched Diffraction Grating Multi/Demultiplexer on a Nanophotonic Silicon-on-Insulator Platform

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