IntroductionUnder electric excitation, semiconductor bridge (SCB) as energy conversion element of initiating explosive device undergoes the various complicated processes such as normal temperature, melting, vaporization, plasma, etc. through heating action [1]. In the past dozen years, some preliminary researches on this change of SCB were conducted to obtain some experimental rules and theoretical knowledge for current and voltage of SCB. The most typical calculation method is the research of Sandia N L who conducts simulation calculation [2] for the relation of SCB resistance dependent upon absorbed energy based on substantial tests; the substantial hypotheses of test results are used for a great number of parameter fitting to obtain the results. In the domestic, the changing characteristics for thermal resistance of semiconductor with physical properties of SCB are adopted to study the relation of bridge resistance dependent upon the absorbed energy and provide the quantitative relation [3].The consistency for ignition of SCB can make the initiating explosive device of SCB serve as the primer for ignition system of artillery [4]. The action time of igniter can exert great influence on the performance of relevant military equipment, and the design for ignition circuit of SCB has important significance on rapid igniting of SCB chip. During electric input loading of SCB, the root cause for change of impedance is the change of SCB temperature; the loaded energy can result in change of SCB temperature which leads to the resistance change and according to the Ohm's law, the resistance change can lead to change of current and voltage. In case the relation between SCB temperature and resistance is obtained, the current and voltage relation of SCB and calculation of the initiation process can become relatively simple without large quantity of parameters in mathematics and the physical significance also become clear.Based on analysis of SCB circuit, the experimental analysis is conducted in three circumstances which are respectively I-V characteristic curve for serial SCB semiconductor, I-V characteristic curve for parallel SCB semiconductor and experimental contrast analysis in the paper.