2004
DOI: 10.1016/j.spmi.2004.09.012
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ECR-assisted MBE growth of In1−Ga N heteroepitaxial films on Si

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Cited by 2 publications
(1 citation statement)
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“…[4][5][6][7] For instance, ECR plasmas are now widely used as reactive gaseous sources in chemical vapor deposition and molecular beam epitaxy for synthesis of thin films and novel materials. 3,[8][9][10][11][12][13] We have combined ECR microwave discharge with pulsed laser ablation and demonstrated a new method for film deposition called ECR plasma-assisted pulsed laser deposition (ECR-PLD). 14,15 In the ECR-PLD method, an ECR plasma is generated by ECR microwave discharge of the working gas, and film deposition is performed by reactive PLD in the ECR plasma environment and with the assistance of the ECR plasma.…”
Section: Introductionmentioning
confidence: 99%
“…[4][5][6][7] For instance, ECR plasmas are now widely used as reactive gaseous sources in chemical vapor deposition and molecular beam epitaxy for synthesis of thin films and novel materials. 3,[8][9][10][11][12][13] We have combined ECR microwave discharge with pulsed laser ablation and demonstrated a new method for film deposition called ECR plasma-assisted pulsed laser deposition (ECR-PLD). 14,15 In the ECR-PLD method, an ECR plasma is generated by ECR microwave discharge of the working gas, and film deposition is performed by reactive PLD in the ECR plasma environment and with the assistance of the ECR plasma.…”
Section: Introductionmentioning
confidence: 99%