Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

“…Such droplets are known to form during PA-MBE under metal (indium) rich growth conditions. Zheng et al have identified the formation and movement of In droplets on the c-plane growth surface [32]. The reported size of the droplets coincide with the size of the type I inhomogeneities discussed here.…”

“…Specifically, most of the type I inhomogeneities that correlate to chemical etch pits correspond to mixed type dislocations such as the one imaged by AFM in Figure 5(c). Zheng et al have reported that the location of indium droplets are correlated with dislocation density for MBE growth, again suggesting that the type I defects are due to indium droplets [32]. It is uncertain whether the droplets form at the location of the dislocation or form elsewhere and migrate along the growth surface to eventually be pinned at the dislocation due to strain fields, or both.…”

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

“…In fact, it has been shown that when H gets involved during InN lm growth, it has a strong tendency towards binding to N, which leads to breaking or weakening the In-N chemical bond. 62 Therefore, given the low thermal stability of In-N bonding structure [13][14][15][16] combined with the highly energetic plasma-induced hydrogen radicals, the probability of In-N chemical bond dissociation would increase, leaving vacated indium sites to be easily bonded with the residual water vapor and oxygen to form hydroxyl (-OH) terminated surfaces. Consequently, during the subsequent In precursor pulsing half-cycle, TMI molecules are readily adsorbed to the -OH groups and lead to the growth of crystalline In 2 O 3 layers.…”

“…[1][2][3][4][5][6][7] Additionally, the low electron effective mass of InN leads to a signicantly high electron mobility ($4400 cm 2 V À1 s À1 ) and a high saturation velocity when compared to other mature III-V compound semiconductors such as GaAs and GaN, which positions InN as a unique candidate for high-speed and highperformance electronic devices. [8][9][10][11][12] However, synthesis of high-quality and defect free InN lms via conventional growth techniques is quite challenging among other III-nitrides due to its low dissociation temperature, which leads to undesired decomposition into metallic In and N 2 gas around 500 C. [13][14][15][16] Conventional synthesis routes such as chemical vapor deposition (CVD), generally utilize NH 3 as the nitrogen co-reactant, which has relatively poor thermal reactivity and therefore require elevated process temperatures and excessively high (typically >10 4 ) NH 3 /TMI (V/III) ratios. [17][18][19][20] Although the use of N 2 plasma as a co-reactant has been shown to improve nitrogen reactivity in the plasma-assisted metal-organic CVD (PA-MOCVD) producing high-quality crystalline InN lms, the process temperatures were still relatively high within the range of 550-775 C. 21 Molecular beam epitaxy (MBE) has been another successful route to produce high-quality, single crystal InN lms, however MBE also requires similar high substrate temperatures for epitaxial growth.…”

Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures

“…InGaN based semiconductors and their nanostructures have attracted strong research due to their optoelectronic applications such as solar cells, light emitting diodes (LED), and laser diodes (LD) [1][2][3]. InGaN is a semiconductor material which covers a wide range of wavelength from infrared (0.7eV) to ultraviolet (3.42 eV) region by tuning the Indium (In) composition.…”