Edge‐Epitaxial Growth of 2D NbS<sub>2</sub>‐WS<sub>2</sub> Lateral Metal‐Semiconductor Heterostructures

Zhang, Yu; Yin, Lei; Chu, Junwei; Shifa, Tofik Ahmed; Xia, Jing; Wang, Feng; Wen, Yao; Zhan, Xueying; Wang, Zhenxing; He, Jun

doi:10.1002/adma.201803665

Cited by 124 publications

(143 citation statements)

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“…As demonstrated by the atomic model, the result confirms the existence of the hexagonal phase and a good crystal quality. Recently, monolayer metallic NbS 2 was also synthesized with a large grain size using an APCVD system . Here, the authors obtain edge lengths as large as 100 µm for as‐grown NbS 2 triangles deposited on sapphire (Figure l and the inset OM image of Figure l).…”

Section: D Metallic Tmdsmentioning

confidence: 79%

“…Though several p–n, p–p, and n–n junctions have been synthesized by facile CVD methods in recent years, metal–semiconductor TMD heterostructures have not yet been directly realized by the CVD approach. Recently, our group first introduced 2D NbS 2 –WS 2 lateral metal–semiconductor heterostructures deposited on a sapphire (0001) substrate using a CVD method ( Figure ) . The growth process is schematically presented in Figure a.…”

Section: Heterostructures Based On Tmd Layered Materialsmentioning

confidence: 99%

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Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

et al. 2019

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www.advmat.de www.advancedsciencenews.com production challenging. Since the discovery of the chemical vapor deposition (CVD) method as a successful approach for the growth of graphene crystals, [53,54] the method has also been expanded to the preparation of other 2D layered materials. Currently, this approach has been extended to rationally design various 2D TMD materials, such as MoS 2 nanosheets, [55][56][57][58] MoSe 2 nanosheets, [59,60] WS 2 nanosheets, [61,62] ReS 2 nanosheets, [63] and some heterostructures, [64,65] which have sparkled several interesting chemical and electronic properties. Although various 2D TMDs have been successfully grown using a facile CVD method, the intrinsic growth mechanism and the batch production of wafer-scale films, conducive to the high-performance in electronics/optoelectronics and other fields, still need more exploration. Very recently, some important progress on the synthesis of 2D TMDs, multi-heterostructures and superlattices has been realized.Herein, we concentrate on the recent progress in the synthesis of 2D TMDs and related heterostructures via the CVD method. We start with the effects of some key factors such as temperature, carrier gas, and the ratio of precursors on the synthesis of 2D TMDs via CVD technique. Then we summarize the importance of the growth substrates and the growth system to large-scale synthesis. Hence, large-scale 2D TMDs have been obtained on the basis of properly designed CVD growth. Furthermore, some recent breakthroughs in the growth of new kinds of semiconducting and metallic 2D TMDs via the CVD technique are described. The fundamental electronic properties and unique physical phenomena emanating from high quality CVD-grown TMDs are also reviewed. Finally, the controlled growth of alloys with tunable band structures, different multiheterostructures with atomically sharp interfaces and superlattices from 2D TMD crystals is analyzed, which can offer further step for the synthesis of 2D crystals and provides significantly more material systems. Lastly, we emphasize a summary of this review and the future prospects of these materials.Recently, the CVD method has been widely regarded as a technique available for growing 2D atomic crystals. Various atomically thin layered MX 2 semiconductors, such as MoS 2 , [55,66,67] WS 2 , [68] MoSe 2 , [69] MoTe 2 , [70,71] etc., have been successfully achieved by the CVD method. Through in-depth research on the growth dynamics in the CVD system, several key factors in the growth process for obtaining a large-scale, uniform monolayer MX 2 have been explored. For example, triangular WS 2 flakes were synthesized on a sapphire substrate via a CVD system, and a detailed analysis of the controllable growth behavior was given. [61] The growth system is maintained at a very low pressure during the growth process via an operating pump, which provides a uniform flow of vapor precursors and is beneficial to the uniform growth. First, the distance between the source and substrate (D ss ) was discovered to be a vital fa...

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Section: D Metallic Tmdsmentioning

confidence: 79%

Section: Heterostructures Based On Tmd Layered Materialsmentioning

confidence: 99%

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

et al. 2019

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“…[ 2–7 ] In the past decades, tremendous progresses have been achieved in the synthesis of various 2H TMDs‐based lateral heterostructures and even superlattices via single‐step, two‐step, or multistep chemical vapor deposition (CVD) growth strategies. [ 8–14 ] Structure modulation and energy band engineering at the atomic‐scale interface of the lateral heterostructures, where many novel physics and potential applications have been discovered, are the core of these research works. [ 14 ]…”

Section: Introductionmentioning

confidence: 99%

Synthesis of 2H‐1T′ WS₂‐ReS₂ Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

Chen

Hong

et al. 2020

Adv Funct Materials

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2D transition metal chalcogenides (TMDs) with different compositions, phase structures, and properties offer giant opportunities for building novel 2D lateral heterostructures. However, the studies to date have been largely limited to homophase TMD heterostructures, while the construction of heterophase TMD heterostructures remains a challenge. Herein, the synthesis of 2H-1T′ WS 2 -ReS 2 heterophase junctions with high-quality interface structure via a hydrogen-triggered one-pot growth approach is reported. Sequential introduction of hydrogen during growth system, which acts as a "switch" to selectively turn off the growth of ReS 2 while turning on the growth of WS 2 , allows WS 2 to seamlessly grow around ReS 2 to form the WS 2 -ReS 2 heterojunction. Moreover, WS 2 prefers to nucleate at the vertices of ReS 2 grain with fixed lattice orientation, which makes the surrounding WS 2 grains merge into single crystal. Scanning transmission electron microscopy reveals high crystal quality of the heterojunction with an atomically sharp 2H-1T′ heterophase interface. Transient absorption spectroscopy indicates that the photocarriers can effectively separate at the heterophase interface. Based on the high quality heterophase junction, prominent rectification characteristics and polarization-dependent photodiode properties are achieved. This study provides a robust way for the controlled synthesis of 2D heterophase structures, which is essential for their fundamental studies and device applications.

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“…Two‐dimensional (2D) materials with sheet‐liked structures have attracted tremendous attention in optoelectronics, electronics, and biomedicine (e.g., therapy, imaging/diagnosis, and biosensors) in recent years . So far, a large number of 2D crystals have been explored, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), and transition metal oxides (TMOs) . Thanks to the weak van der Waals forces between layers, the parent layered bulk materials can be split into thin sheets with several layers .…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9] So far,alarge number of 2D crystalsh ave been explored, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), and transition metal oxides (TMOs). [10][11][12][13][14] Thankst ot he weak van der Waals forces between layers, the parent layered bulk materials can be split into thin sheets with several layers. [15,16] These layered crystals exhibit appealingphysical and chemical characteristics such as semiconducting behavior,n onlinear optics, and valleytronics as well.…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processable Two‐Dimensional In₂Se₃ Nanosheets as Efficient Photothermal Agents for Elimination of Bacteria

Zhu

Shen

Liu

et al. 2018

Chemistry A European J

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Two‐dimensional (2D) nanoflakes represent an appealing class of materials for optoelectronics applications due to their unique layered structures and excellent electronic properties. However, the lack of easy‐to‐manipulate and effective methods for large‐scale production of these 2D materials limits their potential for applications. Also, few efforts have been made to explore their applications in biological fields. This work reports the preparation of large quantities of 2D In2Se3 nanosheets through a solvent exfoliation technique. Transmission electron microscopy and atomic force microscopy results show that the In2Se3 nanosheets are obtained with lateral sizes of tens of nanometers to hundreds of nanometers and thickness of 2–17 layers. Raman features coupled with the X‐ray diffractometry results unequivocally confirm the as‐prepared In2Se3 nanosheets to be α phase. Moreover, these α‐In2Se3 nanosheets exhibit an excellent near‐infrared (NIR) photothermal performance under an 808 nm laser irradiation. NIR photo‐excitation of the α‐In2Se3 nanosheets in the presence of bacteria leads to a significant antibacterial effect, suggesting that these nanosheets have great potential to be photothermal antibacterial agents. Our work on α‐In2Se3 nanosheets presents an available method for exfoliating 2D layered materials, and highlights the potential application in chemical and biological fields of α‐In2Se3 nanosheets.

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Edge‐Epitaxial Growth of 2D NbS₂‐WS₂ Lateral Metal‐Semiconductor Heterostructures

Cited by 124 publications

References 51 publications

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

Synthesis of 2H‐1T′ WS₂‐ReS₂ Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

Solution‐Processable Two‐Dimensional In₂Se₃ Nanosheets as Efficient Photothermal Agents for Elimination of Bacteria

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Edge‐Epitaxial Growth of 2D NbS2‐WS2 Lateral Metal‐Semiconductor Heterostructures

Cited by 124 publications

References 51 publications

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

Recent Progress in CVD Growth of 2D Transition Metal Dichalcogenides and Related Heterostructures

Synthesis of 2H‐1T′ WS2‐ReS2 Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

Solution‐Processable Two‐Dimensional In2Se3 Nanosheets as Efficient Photothermal Agents for Elimination of Bacteria

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Product

Resources

About

Edge‐Epitaxial Growth of 2D NbS₂‐WS₂ Lateral Metal‐Semiconductor Heterostructures

Synthesis of 2H‐1T′ WS₂‐ReS₂ Heterophase Structures with Atomically Sharp Interface via Hydrogen‐Triggered One‐Pot Growth

Solution‐Processable Two‐Dimensional In₂Se₃ Nanosheets as Efficient Photothermal Agents for Elimination of Bacteria