Edge modes splitting by nanostructured surface

Zalutskaya, A. A.; Prokaznikov, A. V.

doi:10.1088/1742-6596/541/1/012079

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“…It is assumed that this effect is caused by the phenomenon of the capture of light wave energy by a nanowire at the wavelengths of some optical resonances. A variation in the color of nanostructured silicon surface formed during the course of anisotropic two stage plasma chemical etching (the Bosch process) is attributed [10] to the capture of a fraction of the incident radiation by waveguide edge modes and by scattering of the remaining radiation at the surface. Ordered Si NP arrays [11] are theoretically considered as a model of a photonic crystal; therefore, as the NP period is decreased in the array, the effect of the Bloch modes in a photonic crystal is increased.…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical properties of silicon nanopillars

et al. 2015

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The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron beam lithography and reactive ion etching are used for the formation of ordered Si NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiON x layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic force microscopy are used to characterize the obtained structures. The Si NP arrays acquire various colors when exposed to "bright field" illumination. The spectra of reflection from the Si NP arrays in the wavelength range 500-1150 nm are obtained.

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Section: Introductionmentioning

confidence: 99%