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The optical properties of ordered arrays of silicon nanorods (Si NRs) were investigated. Electron Beam Lithography followed by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) was used for Si NRs fabrication. Si NRs were chemically and electrically passivated through the deposition of TiONx nanolayer. Tunable color generation from vertical silicon nanorods is demonstrated too.

The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron beam lithography and reactive ion etching are used for the formation of ordered Si NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiON x layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic force microscopy are used to characterize the obtained structures. The Si NP arrays acquire various colors when exposed to "bright field" illumination. The spectra of reflection from the Si NP arrays in the wavelength range 500-1150 nm are obtained.

In this paper, particularities of ordered silicon nanopillars (Si NP) arrays formation by mean electron beam lithography and dry etching were studied. The optical and electrical properties of the Si NPs were investigated.Index Terms -silicon nanopillars, electron beam lithography, nanophotonics.