Optical and electrical properties of silicon nanopillars

Abstract

The electrical and optical properties of silicon nanopillars (Si NPs) are studied. Electron beam lithography and reactive ion etching are used for the formation of ordered Si NP arrays. The Si NPs with a diameter from 60 to 340 nm and a height from 218 to 685 nm are formed. The Si NPs are coated with a TiON x layer with a thickness of 8 nm for chemical and electrical passivation of the surface. Scanning electron microscopy and atomic force microscopy are used to characterize the obtained structures. The Si NP arrays acquire various colors when exposed to "bright field" illumination. The spectra of reflection from the Si NP arrays in the wavelength range 500-1150 nm are obtained.

2D silicon nanopillars arrays for photonics

“…Si NPs with low aspect ratio was investigated too [14][15][16]. We investigate the Si NPs with an average aspect ratio [18,19]. We determine the relation between scattering characteristics and geometrical size of the Si NPs.…”

“…Surface passivation was carried out to most effectively reduce the surface state density and reduce surface recombination. The current-voltage characteristics were measured on a single nanopillar by means of AFM tip (before passivation and after passivation) [19]. It was used AFM Ntegra (NT-MDT) with conductive cantilever.…”

Resonant Reflectance in Silicon Nanorods Arrays

“…The silicon nanorods were fabricated by means of e-beam lithography (Raith-150) and reactive ion etching [23,24]. Prime silicon wafer (n-type) <100> was used as a base material.…”