Effect of 50MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor

60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor

“…For un-irradiated transistor the built in potential, V bi is found to be 1.87 V and it decreased to 1.76 V as the device is irradiated to 1×10 12 ions/cm 2 of 60 MeV and to 1.85 V after irradiation to 100 MeV O-ions of same fluence. The doping concentration for un-irradiated transistor is 1.54×10 16 /cm 3 and it increased to 1.63×10 16 /cm 3 and 1.66×10 16 /cm 3 respectively for 60 MeV and 100 MeV O-ion irradiation for the fluence of 1×10 12 ions/cm 2 [18]. The decrease in current and reduction in capacitance due to irradiation is understood on the basis of irradiation-induced disorders and defects like recombination centres, vacancies and interstitials in the emitter-base region.…”

“…This recombination may be due to the destruction of lattice periodicity in the bulk of the semiconductor and may give rise to energy levels in the band gap. Radiationinduced defects may have such energy levels with them that these defects can have a major impact on the electrical characteristics of the transistor [15][16][17][18]. It clearly shows that the decrease in gain in 60 MeV O-ion transistor is drastic, hence depicts that the device is vulnerable for low energy irradiation.…”

SHI induced damage in electrical properties of silicon NPN BJTs

“…Bipolar junction transistors (BJTs) have important applications in analog or mixed-signal integrated circuits (ICs) and bipolar metal oxide semiconductor (BICMOS) circuits, because of their current drive capability, linearity and excellent matching characteristics. Some of these are extensively used in spacecrafts [1]. The radiation effects on bipolar devices produced by protons, neutrons, electrons and gamma rays have been investigated in the past years [2].…”

“…The radiation effects on bipolar devices produced by protons, neutrons, electrons and gamma rays have been investigated in the past years [2]. However only a few studies are available on irradiation effects of heavy ions for NPN BJTs including the oxygen (O) [3], Lithium (Li) ions [1] and Boron (B) ions [4 -5]. These investigations are valuable to study the effect of radiation on current transport in these devices.…”