Effect of 6MeV electron irradiation on electrical characteristics of the Au/n-Si/Al Schottky diode

Analysis of inhomogeneous device parameters using current–voltage characteristics of identically prepared lateral Schottky structures

“…Furthermore, in the range from E c -0.45 to E c -0.75 eV, the N ss values of 50 dots of Au/n-Si/Al Schottky structures are determined to vary approximately from 2 9 10 13 to 2 9 10 11 eV -1 cm -2 , respectively. A similar result has been reported by Ugurel et al [33] for Au/n-Si Schottky diode. They have shown that the interface state density values of the diode vary from 3.4 9 10 14 to 7.7 9 10 14 eV -1 cm -2 .…”

“…Many researchers have reported that the downward concave curvature of the forward-bias I-V curves of Schottky structures at sufficiently large voltages is caused by the existence of the effect of series resistance (R s ) [31][32][33][34]. We have used Cheung [31] and Norde [34] techniques to determine the series resistance of the Au/n-Si/Al Schottky structures using the I-V measurements.…”

“…They have shown that the interface state density values of the diode vary from 3.4 9 10 14 to 7.7 9 10 14 eV -1 cm -2 . These changes have been attributed to the presence of an interfacial layer between n-Si and Au metal [33]. Moreover, to determine the values of mean N ss for 50 dots of Au/n-Si/Al Schottky structures, the N ss values are also calculated from Eq.…”

The effect of the electron irradiation on the series resistance of Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts

“…Although there are still many issues which are not completely understood theoretically, however, in general, it can be speculated that the exposure of these devices to high energy particles results in a considerable amount of lattice defects. These defects acting as recombination or carrier trapping centers can cause the degradation of the diode performance and applications [4][5][6][7][8]. This is of much greater importance for SiC system, since SiC is more sensitive to the electron irradiation as compared to GaN and ZnO material systems [9][10][11].…”

Incorporation of Al3+ on the rectification properties of ADC thin films

“…The diode ideality factor (n) and the reverse bias saturation current (I o ) are determined from the slope and the intercept of semilogarithmic forward bias I-V plot for V 4 3kT/q using Eq. (1) and the n and the φ b are given by [51,52] n ¼ q KT dV dðln IÞ ð2Þ…”