Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

Borzdov, A. V.; Pozdnyakov, Dmitry; Борздов, В. М.; Orlikovsky, A. A.; Vyurkov, V.

doi:10.1134/s1063739710060065

Cited by 14 publications

(5 citation statements)

References 18 publications

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“…In our simulation ,the scattering rates for 1-D and 2-D channel considered are optical phonon scattering [31,32], acoustic phonon scattering [31,32], polar optical phonon scattering [32,33] and surface roughness scattering [31,34] .…”

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confidence: 99%

Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III–V Semiconductors

Nimje¹,

Sharma²,

Salimath³

et al. 2015

Quant. Matt

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We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende materials at various conditions, such as, temperature, external field etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing length in nanowire is found to be greater than that in 2-D channel.*

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confidence: 99%

Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III–V Semiconductors

Nimje¹,

Sharma²,

Salimath³

et al. 2015

Quant. Matt

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“…Along with Ex, a transverse field is also present. The transverse field breaks the structural inversion symmetry which causes Rashba spin-orbit coupling [11][12]. The electron spin and momentum are coupled via spin-orbit interaction.…”

Section: Modelmentioning

confidence: 99%

Diameter dependence of spin relaxation in SiGe nanowires

Bishnoi

Nandal

Ghosh

2012

2012 10th IEEE International Conference on Semiconductor Electronics (ICSE)

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In this paper, we use 1-D semi classical Monte Carlo Method to investigate spin polarized transport in SiGe nanowires (SiGeNWs) having Ge mole fraction 0.3.We use a multi-subbands semi classical Monte Carlo approach to model spin dephasing. Monte Carlo simulations have been widely adopted to study electron transport in devices and have recently been used in conjunction with spin density matrix calculations to model spin transport. Spin dephasing in SiGeNWs is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The spin polarization is studied along the length of the SiGeNWs. The ensemble averaged spin components variation has been studied for SiGeNWs along the nanowires length. The effect of variation of nanowires diameter on spin dephasing length has been studied. It is found that as the diameter of nanowires increases spin dephasing length also increases and become saturated beyond some value of diameter, this is due to the reduction in surface roughness scattering, which is a dominant contributor to the total scattering rate.

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“…Here n x ðx; tÞ is the number of electrons at time t and position x within an accuracy of Áxs n;i ðtÞ is the nth electron's spin at time \t" and t1, T are start and nish times, respectively. In our simulation, the scattering rates considered are optical phonon scattering, 17,18 acoustic phonon scattering, 17,18 polar optical phonon scattering 18,19 and surface roughness scattering. 17,20 Parameters that have been used to calculate di®erent scattering rates (mentioned above) are shown in Table 1.…”

Section: Modelmentioning

confidence: 99%

Effect of Electric Field, Temperature and Core Dimensions in Iii–v Compound Core–shell Nanowires

Ghosh

Salimath

2014

NANO

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In this paper, we have used semiclassical Monte Carlo method to show the dependence of spin relaxation length in III–V compound semiconductor core–shell nanowires on different parameters such as lateral electric field, temperature and core dimensions. We have reported the simulation results for electric field in the range of 0.5–10 kV/cm, temperature in the range of 77–300 K and core length ranging from 2 nm to 8 nm. The spin relaxation mechanisms used in III–V compound semiconductor core–shell nanowire are D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. Depending upon the choice of materials for core and shell, nanowire forms two types of band structures. We have used InSb – GaSb core–shell nanowire and InSb – GaAs core–shell nanowire and nanowire formed by swapping the core and shell materials to show all the results.

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Effect of a transverse applied electric field on electron drift velocity in a GaAs quantum wire: A Monte Carlo simulation

Cited by 14 publications

References 18 publications

Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III–V Semiconductors

Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III–V Semiconductors

Diameter dependence of spin relaxation in SiGe nanowires

Effect of Electric Field, Temperature and Core Dimensions in Iii–v Compound Core–shell Nanowires

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