Effect of air annealing on the band gap and optical properties of SnSb2S4 thin films for solar cell application

Advances in nanostructured thin film materials for solar cell applications

“…The effect of oxygen annealing on the properties of Sn-Sb-S thin films was studied by Fadhli et al [84]. They reported that the extra phases of SnO 2 appeared at a high annealing temperature and the incorporation of oxygen in Sn-Sb-S reduces the resistivity of the material due to paramagnetic nature of the oxygen, which increased the photoconductivity and optical properties of the obtained thin films [85]. Sn-Sb-S was reported to be an n-type material, and thus mostly p-type material is used as an absorber layer in the fabrication of solar cells.…”

Structural and spectroscopic ellipsometry studies on vacuum-evaporated Sn2m−4Sb4S2m+2 (m = 2.5, 3 and 4) thin films deposited on glass and Si substrates

“…M x Sb y (S,Se,Te) z materials exhibit important phase-change kinetics for high switching speed and high reliability of random access memory [5,6] and high thermoelectric properties [7][8][9]. The Sn-Sb-S system is recently investigated in the field of photovoltaic, since researches are directed towards the development of cost-effective and nontoxic materials that can be synthesized by a simple technology for solar cell fabrication [10][11][12][13][14][15][16][17][18].…”

Synthesis and characterization of copper antimony tin sulphide thin films for solar cell applications

“…Besides it has band gap energy from 2.5eV to 1.6eV for the annealed films, a high absorption coefficient (10 5 cm -1 ) and superior photoconductivity values which are more appropriate for solar harvesting technology [18]. The inclusion of oxygen impurity in the TAS through annealing in oxygen environment was also reported to improve its PV module performance [19][20][21]. However, there are also issues associated with the TAS, such as its high resistivity and n-type conductivity etc.…”