2012
DOI: 10.1007/s10854-012-0937-9
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Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn1−xP/GaAs structure

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Cited by 15 publications
(7 citation statements)
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“…Additionally, n can be derived from the slope of linear region of the forward-bias lnIÀV plot. [53,54] It is given by n D q kT dV dðlnIÞ (9) As can be seen from Figure 4, the similar behaviour was observed due to the effects of some factors such as series resistance, interface states and interfacial layers. The linear region narrows and deviates from linearity.…”
Section: Forward and Reverse Bias Iàv Characteristicssupporting
confidence: 58%
“…Additionally, n can be derived from the slope of linear region of the forward-bias lnIÀV plot. [53,54] It is given by n D q kT dV dðlnIÞ (9) As can be seen from Figure 4, the similar behaviour was observed due to the effects of some factors such as series resistance, interface states and interfacial layers. The linear region narrows and deviates from linearity.…”
Section: Forward and Reverse Bias Iàv Characteristicssupporting
confidence: 58%
“…In this paper, both mechanically stacked and monolithic multijunction (MMJ) GaInP/Si solar cells are investigated. In particular, the sub-cells of the monolithic device are interconnected by considering a GaAs(n + )/GaAs(p + ) tunnel-junction which allows, in principle, a current flow through the structure minimizing the voltage drops [22] . In fact, depending on the Ga composition, the In 1-x Ga x P alloy can be grown on a GaAs substrate with an appropriate lattice match as investigated experimentally in Ref.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that point, line, and volume defects in particular, deteriorate the structural (like lattice deformation), magnetic (like mobility), electrical (like solar cell performance), and optical (like energy band gap) features of the structure [16]. The situation that has come to the forefront, regarding structural defects in experimental studies, is that this constitutes a base for cracks in the structure by wave movement in the c-direction due (21) to high dislocation density.…”
Section: Introductionmentioning
confidence: 99%
“…The situation that has come to the forefront, regarding structural defects in experimental studies, is that this constitutes a base for cracks in the structure by wave movement in the c-direction due (21) to high dislocation density. This situation results in a situation where electron trappings or scattering mechanisms have a negative effect on the structure [16]. Taking these defects into consideration, the analytical solar cell model suggested by Schilinsky et al is a suitable model for the J-V characteristics of solar cells [17,18].…”
Section: Introductionmentioning
confidence: 99%