Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

Mori, M.; Murata, K.; Fujimoto, Naoki; Tatsuyama, C.; Tambo, T.

doi:10.1016/j.tsf.2007.04.042

Cited by 14 publications

(10 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The full width at half maximum (FWHM) of AlSb(111) peak is 0.31°, which is comparable to the result reported in Ref. [13]. This results show that the AlSb layer grown on a Si(111) substrate is good enough for the subsequent growth of InSb.…”

Section: Methodssupporting

confidence: 88%

Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

Murata¹,

Ahmad

Mori

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The heteroepitaxial growth of InSb film via AlSb buffer layer on a Si(111) substrate was performed in an ultra high vacuum. The grown InSb films were characterized by X‐ray diffraction and atomic force microscopy. XRD patterns (ϕ‐scan) of the samples showed different epitaxial relationship between InSb/Si and InSb/AlSb/Si. It is found that surface condition has a significant influence on the growth of InSb films and the surface of InSb films became rough due to the high mixture ratio of domains. The two‐step growth procedure was also tried to further improve the crystal quality of the InSb films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Methodssupporting

confidence: 88%

Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

Murata¹,

Ahmad

Mori

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…9,12,18 The significant improvement in quality of various group III-Sb based compounds grown on Si or GaAs substrates using AlSb buffer layer have been reported. [19][20][21][22][23][24][25][26] Despite the common usage of AlSb as a buffer layer for growing group III-Sb based compounds, it is not thoroughly understood how the AlSb buffer layer influences the growth of GaSb epilayers. AFM and RHEED, two prevalent characterization tools for investigating the epitaxy process, are not well suited to explain the interfacial phenomena.…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Vajargah

Ghanad-Tavakoli

Preston

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

The initial growth stages of GaSb epilayers on Si substrates and the role of the AlSb buffer layer were studied by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Heteroepitaxy of GaSb and AlSb on Si both occur by Volmer-Weber (i.e., island mode) growth. However, the AlSb and GaSb islands have distinctly different characteristics as revealed through an atomic-resolution structural study using Z-contrast of HAADF-STEM imaging. While GaSb islands are sparse and three dimensional, AlSb islands are numerous and flattened. The introduction of 3D island-forming AlSb buffer layer facilitates the nucleation of GaSb islands. The AlSb islands-assisted nucleation of GaSb islands results in the formation of drastically higher quality planar film at a significantly smaller thickness of films. The interface of the AlSb and GaSb epilayers with the Si substrate was further investigated with energy dispersive X-ray spectrometry to elucidate the key role of the AlSb buffer layer in the growth of GaSb epilayers on Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

show abstract

“…When two lattice-mismatched materials are grown on top of each other, a large number of defects, such as misfit dislocations, normally appear. These defects are usually undesirable since they lead to a drastic degradation of the transport and optical properties in the material. − However, in semiconductor nanowires, defect-free or nearly defect-free axial heterostructures between highly lattice mismatched materials can be achieved. , Due to the geometry of the nanowires and their relatively small size compared to bulk, the stress induced by the lattice mismatch can be relaxed at the nanowire side walls, hence preventing the occurrence of defects . This ability to integrate heterostructures with relatively large lattice mismatch is one of the key reasons why nanowires are anticipated to play an important role in future semiconductor devices.…”

mentioning

confidence: 99%

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

et al. 2011

View full text Add to dashboard Cite

One of the main motivations for the great interest in semiconductor nanowires is the possibility of easily growing advanced heterostructures that might be difficult or even impossible to achieve in thin films. For III-V semiconductor nanowires, axial heterostructures with an interchange of the group III element typically grow straight in only one interface direction. In the case of InAs-GaAs heterostructures, straight nanowire growth has been demonstrated for growth of GaAs on top of InAs, but so far never in the other direction. In this article, we demonstrate the growth of straight axial heterostructures of InAs on top of GaAs. The heterostructure interface is sharp and we observe a dependence on growth parameters closely related to crystal structure as well as a diameter dependence on straight nanowire growth. The results are discussed by means of accurate first principles calculations of the interfacial energies. In addition, the role of the gold seed particle, the effect of its composition at different stages during growth, and its size are discussed in relation to the results observed.

show abstract

Effect of AlSb buffer layer thickness on heteroepitaxial growth of InSb films on a Si(001) substrate

Cited by 14 publications

References 15 publications

Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

Crystal orientations of InSb films grown on a Si(111) substrate by inserting AlSb buffer layer

Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Contact Info

Product

Resources

About