Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Abstract

Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/ InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I th ), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (η i ), from 63% to 68%, and increased internal losses α i , from 14.3 to 18.6 cm −1 . Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

Epitaxy and characterization of AlGaInP-based LEDs on Si substrates for visible-spectrum light emission

“…Another possible for output enhancement can be due to the annealing effect to the GaInP active region. The oxygen-related defects can be out-annealed at higher growth temperature[25].…”