Effect of annealing on the electrical and optical properties of electron beam evaporated ZnO thin films

Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

“…The band gap of all the films became more abrupt after annealing treatment, indicating an improvement of the crystal quality. The band gap energy value of the films did not change after annealing treatment, which agrees with the results found by others researchers for annealed e-beam evaporated ZnO [24].…”

Thin films of asymmetrically substituted “ABAB-Type” indium phthalocyanine chloride: Preparation, structural characterization and optical properties

“…In the low absorption region, the refractive index varies also with the wavelength, l, of the incident light according to the relation given by [47] e 1 ¼ e L À The obtained values of refractive and absorption indices allowed calculation the real, e 1 , and imaginary, e 2 , parts of the complex dielectric constant through the relations [49] e 1 ¼ n 2 Àk 2…”

Effect of rf plasma nitriding time on electrical and optical properties of ZnO thin films

“…Interestingly, when the annealing process is carried out at relatively high temperatures (4600 1C), evaporation of lattice constituents takes place at ZnO surface simultaneously with grain growth [17,18]. Furthermore, the annealing process can cause a drastic increase in the electrical resistivity of ZnO thin films [11,16,19], and occasionally a slight decrease in optical transmittance [12]. The last two effects are not desirable especially when ZnO thin films are being applied as transparent electrodes or as windows in solar cells.…”