Effect of annealing temperature and CuO on microstructure and optical band gap of CuxZn1−xO thin films

Lv, Jianguo; Zhou, Zhitao; Wang, Feng; Liu, Changlong; Gong, Wanbing; Dai, Jie-Lin; Chen, Xiaoshuang; He, Gang; Shi, Shiwei; Song, Xiaoguo; Sun, Zhaoqi; Feng, Li

doi:10.1016/j.spmi.2013.06.010

Cited by 8 publications

(4 citation statements)

References 33 publications

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“…The relative concentrations of Sn and S on the samples were evaluated as given in table 3.1 and by the EDS spectrum. The value obtained shows that the TC value of (040) plane of annealed SnS semiconductor channel layer component are larger than 1 which reveals that the SnS thin film is polycrystalline with preferred orientation along the (040) plane denoting that the number of crystallite and grains along this plane is more than that on the other planes [14,15,17]. The peak associated with the (040) plane was used to calculate the crystallite size and other structural parameters been the preferred orientation of the annealed SnS thin film.…”

Section: Results and Discussion Compositional Analysis Of The Annealementioning

confidence: 96%

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Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Daniel

Uno

Isah

et al. 2019

EEJP

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The study aimed at the investigation and application of SnS thin film semiconductor as a channel layer semiconductor in the assembly of an electric double layer field effect transistor which is important for the achievement and development of novel device concepts, applications and tuning of physical properties of materials since the reported EDLFET and the modulation of electronic states have so far been realised on oxides, nitrides, carbon nanotubes and organic semiconductor but has been rarely reported for the chalcogenides. Honey was used as a gel like electrolytic gate dielectric to generate an enhanced electric field response over SnS semiconductor channel layer and due to its ability to produces high on-current and low voltage operation while forming an ionic gel-like solution similar to ionic gels which consist of ionic liguids. SnS gated honey Electric double layer field effect transistor was assembled using tin sulphide (SnS) thin film as semiconductor channel layer and honey as gate dielectric. The measured gate capacitance of honey using LCR meter was measured as 2.15 μF/ cm2 while the dielectric constant is 20.50. The semiconductor layer was deposited using Aerosol assisted chemical vapour deposition and annealed in open air at 250 on an etched region about the middle of a 4×4 mm FTO glass substrate with the source and drain electrode region defined by the etching and masking at the two ends of the substrate. Iridium was used as the gate electrode while a copper wire was masked to the source and drain region to create electrode contact. The Profilometry, X-ray diffraction, Scanning electron microscope, Energy dispersive X-ray spectroscopy, Hall Effect measurement and digital multimeters were used to characterise the device. The SnS thin film was found to be polycrystalline consisting of Sn and S elements with define grains, an optical band of 1.42 eV and of 0.4 μm thickness. The transistor operated with a p type channel conductivity in a depletion mode with a field effect mobility of 16.67 cm2/Vs, cut-off voltage of 1.6 V, Drain saturation current of1.35μA, a transconductance of -809.61 nA/V and a sub threshold slope of -1.6 Vdec-1 which is comparable to standard specifications in Electronics Data sheets. Positive gate bias results in a shift in the cut off voltage due to charge trapping in the channel/dielectric interface.

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Section: Results and Discussion Compositional Analysis Of The Annealementioning

confidence: 96%

“…Quantitative information about the preferential crystallite orientation of the SnS thin films was obtained from the texture coefficient (TC) which represents the preferential growth of certain planes compared to randomly oriented crystallites and was determined from the relation [14][15]:…”

Section: Characterisation Techniques For the Deposited Sns Thin Filmmentioning

confidence: 99%

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Daniel

Uno

Isah

et al. 2019

EEJP

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“…f) Texture Coefficient Quantitative information about the preferential crystallite orientation of the SnS thin films were obtained from the texture coefficient (TC) [12][13]:…”

Section: Structural Characterisation Of Sns Thin Film Semiconductor I) X Ray Diffraction (Xrd)mentioning

confidence: 99%

“…The calculated texture coefficient values of the five samples is given in table 3. The value obtained shows that all the TC values of (040) plane of SnS thin film component are larger than 1 which indicates that all the SnS films are polycrystalline with preferred orientation along the (040) plane which denotes that the number of grains along this plane is more than that on the other planes [12], [13], [17] and the degree of preferential orientation (DPO) increased with increase in thickness.…”

Section: Texture Coefficientmentioning

confidence: 99%

Structural and microstructural study of SnS thin film semiconductor of 0.2<tâ‰¤ 0.4 Î¼m thickness for application in a field effect transistor

Daniel

Uno

Isah³

et al. 2019

IJPR

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SnS semiconductor thin film of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition (AACV) on glass substrates and were investigated for use in a field effect transistor. Profilometry, X-ray diffraction, Scanning electron microscope and Energy dispersive X-ray spectroscopy were used to characterise the structural and microstructural properties of the SnS semiconductor. The SnS thin film was found to initially consist of a single crystal at thickness of 0.20 to 0.25μm after which it becomes polycrystalline with an orthorhombic crystal structure consisting of Sn and S elements whose composition varied with increase in thickness. The SnS film of 0.4 μm thickness shows a more uniform grain distribution and growth with a crystal size of 60.57 nm and grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density hence allowing charge carriers to move freely in the lattice thereby causing a reduction in resistivity, increase in conductivity of the films and enhanced energy band gap which are essentially parameters for a semiconductor material for application in a field effect transistor.

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Preparation and Characterization of Zn x Cu(1−x)O Composite Films on Glass Substrates Through SILAR Processing

Bayansal

Şahin

Yüksel

2015

Metall Mater Trans A

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Effect of annealing temperature and CuO on microstructure and optical band gap of CuxZn1−xO thin films

Cited by 8 publications

References 33 publications

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Electric Double Layer Field Effect Transistor Using SnS Thin Film as Semiconductor Channel Layer and Honey Gate Dieletric

Structural and microstructural study of SnS thin film semiconductor of 0.2<tâ‰¤ 0.4 Î¼m thickness for application in a field effect transistor

Preparation and Characterization of Zn x Cu(1−x)O Composite Films on Glass Substrates Through SILAR Processing

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