2012
DOI: 10.1134/s1064226912050038
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Effect of annealing temperature and rate of sputtering on the magnetic properties and microstructure of the polycrystalline nickel films with (200) texture

Abstract: The dependences of the magnetic properties and morphology of polycrystalline nickel (Ni) films with the (200) texture that are fabricated using the dc magnetron sputtering on the SiO 2 /Si(100) substrates on sputtering rate annealing temperature T, and film thickness d are analyzed. It is demonstrated that an increase in the sputtering rate from 17 to 35 nm/min does not affect the saturation magnetization 4πM and ferromagnetic resonance line width ΔH but leads to a significant increase in the coercivity H c fo… Show more

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Cited by 9 publications
(3 citation statements)
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“…oxidized Si, is determined by the minimization of surface and interface energy and it is usually {111} [41]. However, it has been recently noticed that in thin Ni films one may under certain circumstances observe {200} texture [42]. This is the case when in the polycrystalline nickel films exhibit more significant internal deformations in comparison to grains with {111} texture.…”
Section: Discussionmentioning
confidence: 99%
“…oxidized Si, is determined by the minimization of surface and interface energy and it is usually {111} [41]. However, it has been recently noticed that in thin Ni films one may under certain circumstances observe {200} texture [42]. This is the case when in the polycrystalline nickel films exhibit more significant internal deformations in comparison to grains with {111} texture.…”
Section: Discussionmentioning
confidence: 99%
“…Annealing treatment.-Annealing treatment is recognized as an effective way to improve the Ni thermal resistor's performance. 28 It is performed by heating the Ni thermistor in a vacuum furnace. Annealing temperatures of 200-400°C and holding periods of 2, 4, or 6 h were considered.…”
Section: Fabricationmentioning
confidence: 99%
“…4(b) . One has to conclude that a structural relaxation occurs in Ni, while it is heated and strained by e x ow À e y ow between stages C and D. Both bulk recrystallization in Ni and interface interdiffusion occur even for temperature as low as 450 K. [21][22][23][24] Strong indication of such relaxation is shown in Fig. 3(a) where the slight anisotropy present at stage C disappears at stage F. We have other samples where a much stronger uniaxial anisotropy disappears from stage C to D (not shown here).…”
Section: (A) Distribution Of E Xmentioning
confidence: 99%