Effect of Annealing Temperature on the Properties of Sputtered Bi_3.25La_0.75Ti₃O₁₂Thin Films

Abstract

Bi 3.25 La 0.75 Ti 3 O 12 (BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/SiO 2 /Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from 600℃ to 750℃ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at 700℃ was 10.92 μC/cm 2 . The fatigue characteristic of the BLT thin film annealed at 700℃ was shown change polarization up to 1.2 × 10 9 switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.