Effect of annealing temperature on wettability of TiO2 nanotube array films

Yang, Lei; Zhang, Miao; Shi, Shiwei; Lv, Jianguo; Song, Xiaoguo; He, Gang; Sun, Zhaoqi

doi:10.1186/1556-276x-9-621

Cited by 52 publications

(40 citation statements)

References 37 publications

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“…Rutile compared to other phases has more stability while anatase and brookite are metastable and can be easily transformed to anatase by heating [19,20]. Annealing at 600 o C creates rutile phase in annealed TiO2 [21].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Asalzadeh¹,

Yasserian²

2019

Semiconductors

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This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After annealing TiO2 thin films at 600 o C, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600 o C to the room temperature under 3 different rates: 2 o C/min, 6 o C/min and 8 o C/min. The Surface morphology, crystal structure, and electrical property of samples were characterized by atomic force measurement (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) technique. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of titanium dioxide. Sample with 2 o C/m has the biggest grain size, and more electrical resistivity while the smallest grain size and lowest electrical resistivity belong to sample with 8 o C/m cooling rate. 1.INTRODUCTION:TiO2 as one of the most thermally and chemically stable semiconductor has been attractive for many researchers [1][2][3][4][5][6]. Due to its interesting chemical, electrical and optical properties [7,8] it has been widely used in many application like solar cells [9], photocatalysis [10], gas sensor [11]. Also, because of its low electrical resistivity, TiO2 is an interesting material for microelectronic devices [12].The TiO2 thin film can be fabricated using various methods, like chemical vapor deposition (CVD), ion beam deposition, sol gel dip, plasma enhance chemical vapor deposition, RF magnetron sputtering, and DC magnetron sputtering [13,15] Since DC magnetron sputtering is a more controllable deposition technique that

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Section: Introductionmentioning

confidence: 99%

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Asalzadeh¹,

Yasserian²

2019

Semiconductors

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“…The recombination of photoinduced electrons and holes releases energy in the form of PL emission spectra. The PL peaks located in the visible luminescence band are correlated to oxygen vacancies on the surface of TiO 2 and that the intensity of the emission peaks increases with the defect levels [15], [16]. Fig.…”

Section: Characterization Of Ni(oh)2/cds/znin2s4/tio2 Photoanodesmentioning

confidence: 84%

Data on the effect of improved TiO2/FTO interface and Ni(OH)2 cocatalyst on the photoelectrochemical performances and stability of CdS cased ZnIn2S4/TiO2 heterojunction

et al. 2018

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This data article presents the experimental evidences of the effect of TiO2-fluorine doped tin oxide interface annealing and Ni(OH)2 cocatalysts on the photoelectrochemical, structural, morphological and optical properties of Ni(OH)2/CdS/ZnIn2S4/TiO2 heterojunction. The Raman spectroscopy exhibits the sharp features of the rutile phase of TiO2 and in agreement with the X-ray diffraction data. The band gap energy of the 500 °C sample was found to be 3.12 eV, further it was increased to 3.20, 3.22 eV for samples annealed at 600 and 700 °C respectively. The decrease in the band gap energy at 500 °C related to the oxygen vacancies and was analysed by photoluminescence spectroscopy analysis. The synthesis, characterization methods and other experimental details of TiO2 based heterostructure are also provided. The presence of CdS and ZnIn2S4 coating on surface of TiO2 electrodes providing a high surface area, extended visible absorption and helps to improve the change separation. This data article contains data related to the research article entitled “Highly efficient and stable 3D Ni(OH)2/CdS/ZnIn2S4/TiO2 heterojunction under solar light: Effect of an improved TiO2/FTO interface and cocatalyst” (Mahadik et al., 2017) [1].

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“…Heat treatment can accelerate the elimination of surface hydroxyl groups. 85 As a result, to reach a sort of gradual improvement in the wettability of Ag films; the changing in annealing temperature can be employed.…”

Section: Resultsmentioning

confidence: 99%

Effect of post-annealing treatment on the wetting, optical and structural properties of Ag/Indium tin oxide thin films prepared by electron beam evaporation technique

Azizian‐Kalandaragh¹,

Nouhi²,

Amiri³

2015

mat express

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In this approach, Ag thin films have been prepared using electron beam evaporation technique onto a thin film of tin-doped indium oxide coated ordinary glass substrate. The fabricated thin films were annealed in various temperatures: 100, 200, 300 and 400 C and the effect of annealing on their wetting, structural and morphological properties has been investigated. Scanning electron microscopy (SEM), UV-Visible spectroscopy (UV-Vis), diffuse reflectance spectroscopy (DRS), X-ray diffraction (XRD) and contact angle measurement have been applied for the characterization and study of thin film surfaces. The results of SEM exhibit the aggregation and formation of Ag nanoparticles on the surface of substrate changed through increasing of annealing temperature. The presence of mixed In 2 O 3 -Ag phases in the as-prepared and annealed samples was confirmed by XRD pattern. Optical behavior of thin films was followed by using diffuse reflectance spectroscopy. Wettability studies showed that the contact angle of prepared thin films was influenced by various parameters such as annealing temperature, surface morphology and composition of thin films.

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Effect of annealing temperature on wettability of TiO2 nanotube array films

Cited by 52 publications

References 37 publications

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films

Data on the effect of improved TiO2/FTO interface and Ni(OH)2 cocatalyst on the photoelectrochemical performances and stability of CdS cased ZnIn2S4/TiO2 heterojunction

Effect of post-annealing treatment on the wetting, optical and structural properties of Ag/Indium tin oxide thin films prepared by electron beam evaporation technique

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