Effect Of Annealing Time On The Composition, Microstructure And Band Gap Of Copper Zinc Tin Sulfide Thin Films

Singh, Om Pal; Muhunthan, N.; Singh, Vidya Nand; Singh, Bhanu Pratap

doi:10.5185/amlett.2015.6584

Cited by 24 publications

(5 citation statements)

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“…It is observed that absorption coefficient is in the range of ~104 to ~105 cm-1 within the region ≥1.50 eV. The high value of absorption coefficient obtained in this study was within the range observed in other studies, and shows that CZTS is a viable solar cell absorber (Singh et al, 2015).…”

Section: Resultssupporting

confidence: 85%

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VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

O¹,

L²,

N³

et al. 2020

IJAST

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Cu2ZSnS4 (CZTS) solar technology is considered as a viable replacement to copper indium gallium selenide (CIGS) solar technology. Though CIGS technology has achieved high efficiency, 20%, it is faced with problems of material scarcity and toxicity. Therefore, CZTS which contains earth abundant and nontoxic materials is a best alternative. In this study, properties of CZTS deposited by low cost electrodeposition, layering of CZT with Sn as the underneath layer and a composite of Zn and Cu as the top layer, coupled with chemical bath in Na2S solution and then annealed under sulphur rich atmosphere were investigated. The optical band gaps of the annealed samples ranged between 1.59 to 1.94 eV with absorption coefficient in the order of ~104 cm-1 in the visible and near infrared range of the solar spectrum. The electrical sheet resistivity of the samples was observed to decrease with annealing temperature. The quality of the deposited CZTS was determined using Raman Spectroscopy, main peak at 338 cm-1 was observed for films annealed at 550 oC.

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Section: Resultssupporting

confidence: 85%

“…The presence of ZnS in the sample annealed at 550oC indicated that the CZTS thin film deposited was rich in Zn (Dimitrievska et al, 2014) as expected for a best performing CZTS film. Zn rich prevents formation of Cu-Sn-S ternary phases, which was readily converted to CZTS under heat treatment (Singh et al, 2015).…”

Section: Resultsmentioning

confidence: 99%

VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

O¹,

L²,

N³

et al. 2020

IJAST

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“…Postdeposition annealing was carried out in a sliding horizontal tube furnace for 3 min at 500 ∘ C. CZTS film on a Mo coated SLG substrate was placed on a ceramic plate and kept inside the quartz tube of the single zone furnace. Furnace was mounted on a sliding rail and thus it can move both ways using an electric switch with a constant speed [24]. The furnace temperature was increased to 500 ∘ C with a ramping rate of 20 ∘ C per min and argon flow rate was set to 30 sccm.…”

Section: Methodsmentioning

confidence: 99%

Interfacial Properties of CZTS Thin Film Solar Cell

Muhunthan

Singh

Thakur

et al. 2014

Journal of Solar Energy

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Cu-deficient CZTS (copper zinc tin sulfide) thin films were grown on soda lime as well as molybdenum coated soda lime glass by reactive cosputtering. Polycrystalline CZTS film with kesterite structure was produced by annealing it at 500°C in Ar atmosphere. These films were characterized for compositional, structural, surface morphological, optical, and transport properties using energy dispersive X-ray analysis, glancing incidence X-ray diffraction, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, UV-Vis spectroscopy, and Hall effect measurement. A CZTS solar cell device having conversion efficiency of ~0.11% has been made by depositing CdS, ZnO, ITO, and Al layers over the CZTS thin film deposited on Mo coated soda lime glass. The series resistance of the device was very high. The interfacial properties of device were characterized by cross-sectional SEM and cross-sectional HRTEM.

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“…The optical band gap energy was calculated by using the following equation The obtained band gap value is given in Table . The band gap values of the AZTSe films deposited on Cu and Ag substrates show higher value attributed to smaller crystallite size (Table ) and may contain secondary phases . The formation of secondary phase (ZnSe, CuSe, SnSe, and SnSe) presented in the material affected both optical and electrical conductivities.…”

Section: Resultsmentioning

confidence: 99%

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

2019

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This work describes the photoelectrochemical (PEC) performance of Ag 2 ZnSnSe 4 (AZTSe) thin films prepared on various conductive substrates such as Al, Cu, Ag, and conventional glass by a thermal evaporation method. The X-ray diffraction analysis confirms that the deposited films are the pure tetragonal structure of AZTSe. The scanning electron microscope (SEM) images show polygonal-shaped and spherical-rich particles, which are uniformly distributed over the substrates and are densely packed. By comparing the SEM images, the average particle size of Ag/AZTSe film seems to be higher than that of the other films. The energy-dispersive X-ray analysis is witnessed for nearly stoichiometric values for the films. The optical absorption coefficient of AZTSe thin films is found to be about 10 4 cm −1 and its band gap is found in the range of 1.54−2.15 eV. The Mott−Schottky plot shows n-type conductivity for all of the films. The J−V plot confirms the photoactivity for all of the films. Among the films, the Ag/AZTSe film shows higher power conversion efficiency of about 0.32%. However, further investigation is needed to optimize the thickness of the conductive layer for improving the efficiency of photoelectrochemical cell in comparison to that of the industrially established materials.

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Effect Of Annealing Time On The Composition, Microstructure And Band Gap Of Copper Zinc Tin Sulfide Thin Films

Cited by 24 publications

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VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

Interfacial Properties of CZTS Thin Film Solar Cell

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

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Effect Of Annealing Time On The Composition, Microstructure And Band Gap Of Copper Zinc Tin Sulfide Thin Films

Cited by 24 publications

References 0 publications

VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

VARIATIONOF CHARACTERISTIC PROPERTIES OF Cu2ZSnS4 DEPOSITED BY ELECTRODEPOSITION LAYERING OF CZT METHOD COUPLEDWITH CHEMICAL BATH IN Na2S SOLUTION TECHNIQUEWTH ANNEALING TEMPERATURE

Interfacial Properties of CZTS Thin Film Solar Cell

Influence of Substrates on the Photoelectrochemical Performances of Ag2ZnSnSe4 Thin Films

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Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films