Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory

Gan, Kai Jhih; Liu, Po–Tsun; Ruan, Dun-Bao; Hsu, Chih Chieh; Chiu, Yu-Chien; Sze, Simon M.

doi:10.1007/s11664-020-08177-9

Cited by 13 publications

(4 citation statements)

References 19 publications

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“…Gallium oxide, a wide band gap material (∼4.8 eV) with a very large breakdown electric field (∼8 MV/cm) and a relatively large dielectric constant (ϵ r = 10–16) , is considered an attractive candidate in memristive systems because it can sustain high electric fields without undergoing permanent damage. − Furthermore, it can be sensitively tuned from an intrinsically insulating oxide to a low resistance suboxide based on subtle variations in composition. , Studies specific to resistive switching in gallium oxide include bipolar, ,− or unipolar switching, , depending upon the voltage polarity or magnitude during the set and reset processes. , The switching mechanism in these devices is influenced by cell architecture as well as the choice of active electrode materials.…”

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confidence: 99%

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

et al. 2021

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In this work, native GaO x is positioned between bulk gallium and degenerately doped p-type silicon (p + -Si) to form Ga/GaO x /SiO x /p + -Si junctions. These junctions show memristive behavior, exhibiting large current−voltage hysteresis. When cycled between −2.5 and 2.5 V, an abrupt insulator−metal transition is observed that is reversible when the polarity is reversed. The ON/ OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10 8 and retain the ON and OFF resistive states for up to 10 5 s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

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confidence: 99%

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

et al. 2021

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“…The SET and RESET voltages for the device were -1.68 and 0.45 V. Gan et al in ref. [107] investigated the effect of temperature and annealing atmosphere on the switching properties of the Cu/TiW/Ga 2 O 3 / Pt memory device resistance. Annealing in nitrogen and The SET and RESET voltages for the device were -12 and 14 V. The high/low resistance ratio of the device was 10 2 and both states are stable for 10 5 s. Gan et al in ref.…”

Section: Memory Devicesmentioning

confidence: 99%

“…Gan et al in ref. [107] examined the influence of annealing parameters on a memory device based on an amorphous gallium oxide layer. Annealing in a nitrogen atmosphere improves the device parameters.…”

Section: Memory Devicesmentioning

confidence: 99%

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Petrenko¹,

Kovach²,

Bauman³

et al. 2021

Rev Adv Mater Tech

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“…However, the operating mechanism of RRAM has not yet been clarified. In fact, the conductive filament model is the most acceptable theory model, in which the resistance state can be distinguished by the filament's formation and rupture [16][17][18][19][20][21][22]. On the other hand, the filament model can be further divided into two kinds of operation mode, which are the oxide resistive random access memory (OxRRAM) and the conductive-bridging random access memory (CBRAM).…”

Section: Introductionmentioning

confidence: 99%

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

et al. 2021

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In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrations and different oxygen vacancy distribution. In addition, the electrical characteristics of CBRAM device with different oxygen concentration are compared and further analyzed with an atomic force microscope and X-ray photoelectron spectrum. Furthermore, a stacking structure with different bilayer switching is also systematically discussed. Compared with an interchange stacking layer and other single layer memory, the CBRAM with specific stacking sequence of bilayer oxygen-poor/-rich IWZO (IWZOx/IWZOy, x < y) exhibits more stable distribution of a resistance state and also better endurance (more than 3 × 104 cycles). Meanwhile, the memory window of IWZOx/IWZOy can even be maintained over 104 s at 85 °C. Those improvements can be attributed to the oxygen vacancy distribution in switching layers, which may create a suitable environment for the conductive filament formation or rupture. Therefore, it is believed that the specific stacking bilayer IWZO CBRAM might further pave the way for emerging memory applications.

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Effect of Annealing Treatment on Performance of Ga2O3 Conductive-Bridging Random-Access Memory

Cited by 13 publications

References 19 publications

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film

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