Effect of anodic interface layers on the unipolar switching of HfO&lt;inf&gt;2&lt;/inf&gt;-based resistive RAM

Wang, X. P.; Chen, Y. Y.; Pantisano, L.; Goux, L.; Jurczak, M.; Groeseneken, G.; Wouters, Dirk J.

doi:10.1109/vtsa.2010.5488914

Cited by 6 publications

(11 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although previous studies on HfO 2 -based RRAM devices have also shown unipolar resistive switching, it was in some way always due to the metals chosen for the bottom and top electrodes [ 48 ]. It is known that RRAM cells that use the same metal for both electrodes will most likely show URS [ 13 ], as observed in the case of Pt/HfO 2 /Pt [ 49 , 50 ] and TiN/HfO 2 /TiN [ 51 ] MIM stacks. At the same time, Pt/HfO 2 /TiN cells can demonstrate both URS and BRS [ 52 , 53 ].…”

Section: Resultsmentioning

confidence: 99%

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

et al. 2022

View full text Add to dashboard Cite

HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe2O3. However, coercive force could also be enhanced by the choice of appropriate ratios of HfO2 and Fe2O3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5–350 K, decreasing towards higher temperatures and increasing with the films’ thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO2 layers grown alternately with magnetic Fe2O3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.

show abstract

Section: Resultsmentioning

confidence: 99%

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

et al. 2022

View full text Add to dashboard Cite

show abstract

“…, Al 2 O 3 , NiO, TiO 2 , TaO 2 , ZrO 2 , HfO 2 ), HfO x has been a primary focus due to several promising features including: CMOS compatibility, scalability (<10 nm), fast writing speed (<1 ns), good switching endurance (>10 10 cycles), and lower energy consumption. 17–19 Within the adaptive oxide layer of a filamentary memristor, a conductive filament is formed through a dielectric breakdown process. Subsequently, this conductive filament is partially ruptured and reformed during the set and reset operations which controls the resistance state of the device.…”

Section: Introductionmentioning

confidence: 99%

“…37 One previous study used ALD to synthesize titanium doped HfO x memristors and demonstrated multi-level resistive switching capabilities. 38 However, a top titanium capping layer was not used, which has proven beneficial for RRAM such as lowering the forming voltage and improving the switching window and device yield 19,39 and a detailed understanding of the impact of titanium doping on forming and switching was not been reported.…”

Section: Introductionmentioning

confidence: 99%

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

et al. 2022

View full text Add to dashboard Cite

show abstract

“…Stack engineering through the use of a metallic IL has also been explored in ReRAM to improve the cell characteristics. Since the oxygen deficiency centres, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…It has been demonstrated that a metallic Hf IL may be used to scavenge oxygen in HfO 2 ‐based stacks and create an O‐deficiency gradient profile, favouring the formation of the switching filament during electrical stress. It has also been found that the introduction of metallic Hf IL influences not only the switching characteristics of the cells , but also the filament characteristics and the band alignment of the stack , improving in this way the overall memory cell performance .…”

Section: Introductionmentioning

confidence: 99%

Modulation of electron barriers between TiN_x and oxide insulators (SiO₂, Al₂O₃) using Ti interlayer

Stefano

Afanasʼev

Houssa

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

Precise evaluation of the effective work function and the built‐in voltage in metal–oxide–metal (MOS) or metal–insulator–metal (MIM) stacks is crucial for attaining the functionality of various oxide‐based electron devices. We studied the impact of a low work function (WF) metal interlayer (IL), i.e. Ti, on the electron barrier height between the metal Fermi level and the conduction band of the oxide insulator. The experiments were performed on structures comprised of a layer of thermal SiO2 or an atomic layer deposited Al2O3 on heavily doped p‐ or n‐Si substrates. In order to evaluate the impact of the Ti IL, 3, 6 or 10 nm thick Ti films have been deposited prior to TiNx sputtering. Spectral curves of electron photoemission from the metal layer into the oxide were analyzed in order to determine the energy barrier for electrons between the Fermi level of the metal and the conduction band of the insulator (Φe). As expected, the insertion of the low WF metal shifts the barrier to lower energies, depending on the IL thickness. However, while a 3‐nm thick Ti IL is sufficient to lower the barrier by 0.5 eV in the SiO2‐based stack, it has no measurable impact on the barrier in the Al2O3/Ti/TiNx stack. For the latter structure, both Ti and the Al2O3 thicknesses influence the Φe lowering trend, suggesting that oxygen scavenging from Al2O3 by Ti and nitridation of the Ti IL by subsequent TiN deposition may affect the band alignment between the metal and the oxide.

show abstract

Effect of anodic interface layers on the unipolar switching of HfO<inf>2</inf>-based resistive RAM

Cited by 6 publications

References 6 publications

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Modulation of electron barriers between TiN_x and oxide insulators (SiO₂, Al₂O₃) using Ti interlayer

Contact Info

Product

Resources

About

Effect of anodic interface layers on the unipolar switching of HfO<inf>2</inf>-based resistive RAM

Cited by 6 publications

References 6 publications

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfOx RRAM

Modulation of electron barriers between TiNx and oxide insulators (SiO2, Al2O3) using Ti interlayer

Contact Info

Product

Resources

About

Towards a better understanding of the forming and resistive switching behavior of Ti-doped HfO_x RRAM

Modulation of electron barriers between TiN_x and oxide insulators (SiO₂, Al₂O₃) using Ti interlayer