Effect of basal‐plane stacking faults on the Bragg peak broadening in m‐plane GaN

Abstract

The effect of basal‐plane stacking faults on the Bragg peak broadening in m‐plane GaN is studied using X‐ray diffraction ω‐scans and ω/2θ‐scans. The analysis considers the coexistence of multiple broadening contributions including tilt, twist, limited coherence length, and micro‐strain. Although the effects of basal‐plane stacking faults are detectable in the different configurations used in this study, we show that the ω‐scans in the asymmetric geometry are better suited for quantifying basal‐plane stacking fault‐related broadening, since the broadening due to twist does not affect the ω‐scan profiles in such diffraction geometries (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Synthesis and photoluminescence of novel red-emitting ZnWO4: Pr3+, Li+ phosphors

“…The formation reason for irregular cylindrical morphology is that the growth (or stacking) rate of the basal plane is faster than that of the side surface when the calcined temperature reaches at 1000 ℃. According to the crystal-growth theory, compared with the side surface, there are more stacking faults on basal plane which lead to faster crystal growth [27]. Eventually, the analogous cylindrical powder crystals are formed.…”