Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Kim, Sungjun; Cho, Seongjae; Park, Byung‐Gook

doi:10.5573/jsts.2016.16.2.147

Cited by 10 publications

(12 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the HRS curve was divided into three different segments. In the low-voltage region, Ohmic transport with the slope of ∼1 was observed whereas the slope increased to ∼2 and further rose up to ∼3 in the high-voltage region, which showed good agreements with space-charge-limited current (SCLC) conduction mechanism [28]. The stability of the Ag filaments was further verified by the data retention tests as shown in Fig.…”

Section: Resultssupporting

confidence: 57%

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

Sun

et al. 2020

IEEE Access

View full text Add to dashboard Cite

The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electrode angle (EA), electrodes spacing (ES) and electrode trench depth (ETD) associated with the double wedge-like electrodes of the filament-type RRAM devices are studied for the first time. Our experimental results show that apart from the resistive switching uniformity, the reliability performance such as cycling endurance and data retention are significantly improved for the device with small EA (90 •), narrow ES (440 nm) and deep ETD (90 nm) owing to the electric field confinement and enhancement. Thus, this new approach can be served as a guideline for the design and optimization of the filament-type RRAM devices. INDEX TERMS Electrode structure engineering, resistive switching uniformity, RRAM device reliability.

show abstract

Section: Resultssupporting

confidence: 57%

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

Sun

et al. 2020

IEEE Access

View full text Add to dashboard Cite

show abstract

“…Figure S3 shows cumulative probability distribution of formation voltage ( V form ) of the S1, S2 S3, and S4 devices. The V form increases with increasing AlO x thickness . The operation voltages of all devices are optimized manually and measured DC cycles.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The V form increases with increasing AlO x thickness. 53 The operation voltages of all devices are optimized manually and measured DC cycles. The SET voltage (V SET ) and RESET voltage (V RESET ) of the S2 devices are approximately 0.6 and −0.47 V, respectively.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO_x Interfacial Layer in a-CO_x-Based Conductive Bridge Random Access Memory

2020

View full text Add to dashboard Cite

The Cu migration is controlled by using an optimized AlO x interfacial layer, and effects on resistive switching performance, artificial synapse, and human saliva detection in an amorphous-oxygenated-carbon (a-CO x )-based CBRAM platform have been investigated for the first time. The 4 nm-thick AlO x layer in the Cu/AlO x /a-CO x /TiN x O y /TiN structure shows consecutive >2000 DC switching, tight distribution of SET/RESET voltages, a long program/erase (P/E) endurance of >109 cycles at a low operation current of 300 μA, and artificial synaptic characteristics under a small pulse width of 100 ns. After a P/E endurance of >108 cycles, the Cu migration is observed by both ex situ high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy mapping images. Furthermore, the optimized Cu/AlO x /a-CO x /TiN x O y /TiN CBRAM detects glucose with a low concentration of 1 pM, and real-time measurement of human saliva with a small sample volume of 1 μL is also detected repeatedly in vitro. This is owing to oxidation–reduction of Cu electrode, and the switching mechanism is explored. Therefore, this CBRAM device is beneficial for future artificial intelligence application.

show abstract

“…The Schottky interface with a van der Waals (vdW) gap between the r-TLG and the Ir-BE is responsible for the increase of the operation voltages of the r-TLG/Ir sample, leading to the drift of Ag ions into the RS layer for the lower resistance at the HRS. For the TLG/Ni sample, the rough surface of TLG on the Ni film (Figure b) induces a locally high electric field of the RS layer for the help of the formation of Ag-CF, contributing to the reduced operation voltages and a lower resistance value at the HRS compared to those of the Ni sample. Figure b,c shows the statistical distributions of the resistances at the HRS and LRS with pulse operation for all samples.…”

Section: Resultsmentioning

confidence: 99%

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Wang

Chan

Chen

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Bernal- and rhombohedral-stacked trilayer graphene (B- and r-TLG) on nickel (Ni) and iridium (Ir) films acting as bottom electrodes (BEs) of silver electrochemical metallization cells (Ag-EMCs) have been investigated in this study. Prior to the fabrication of the EMC devices, Raman mapping and atomic force microscopy are applied to identify the B- and r-TLG sheets, with the latter revealing a significant D peak and a rough surface for the Ir film. The Ag-EMCs with the stacked BE of r-TLG on the Ir film show a conductive mechanism of Schottky emission at the positive top electrode bias for both high- and low-resistance states that can be examined by the resistance change with the device area and are modulated by pulse bias operation. Thus, an effective electron barrier height of 0.262 eV at the r-TLG and Ir interface is obtained because of the conspicuous energy gap of r-TLG on the Ir film and the van der Waals (vdW) gap between the r-TLG and Ir contact metal. With the use of Ni instead of Ir contact metal, the Ag-EMCs with TLG BE demonstrate +0.3 V/-0.75 V operation voltages, more than 10 s data retention at 115 °C and 250 times endurance testing, making the TLG sheets suitable for low-power nonvolatile memory applications on flexible substrates.

show abstract

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Abstract: Index Terms-Electrochemical metallization memory, conductive-bridge random-access memory, silicon nitride, metal-insulator-metal, metal-insulator-silicon

Cited by 10 publications

References 24 publications

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO_x Interfacial Layer in a-CO_x-Based Conductive Bridge Random Access Memory

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Contact Info

Product

Resources

About

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

Abstract: Index Terms-Electrochemical metallization memory, conductive-bridge random-access memory, silicon nitride, metal-insulator-metal, metal-insulator-silicon

Cited by 10 publications

References 24 publications

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlOx Interfacial Layer in a-COx-Based Conductive Bridge Random Access Memory

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

Contact Info

Product

Resources

About

Controlling Cu Migration on Resistive Switching, Artificial Synapse, and Glucose/Saliva Detection by Using an Optimized AlO_x Interfacial Layer in a-CO_x-Based Conductive Bridge Random Access Memory