Effect of carrier mobility on performance of perovskite solar cells

Abstract

The high carrier mobility and long diffusion length of perovskite material have been regarded because of its excellent photovoltaic performance. However, many studies have shown that a diffusion length longer than 1 µm and higher carrier mobility have no positive effect on the cells' performance. Studies of organic solar cells have demonstrated the existence of an optimal mobility value, while systematic research of the carrier mobility in the PSCs is very rare. To make these questions clear, the effect of carrier mobility on perovskite solar cells' performance is studied in depth in this paper by simulation.Our study shows that the optimal mobility value of the charge transportation layer and absorption layer are influenced by both doping concentration and layer thickness. The appropriate carrier mobility can reduce the carrier recombination rate and enhance the carrier concentration, thus improving the cells' performance. A high efficiency of 27.39% is obtained in the simulated cell with the combination of the optimized parameters in the paper.

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1−xCsxSnI3-Based Solar Cells Using SCAPS

“…Previously cited works herein emphasized the common issues and limitations that arise in employment of pure FASnI 3 perovskites [ 36 ], namely, oxidation and crystal structure deviation, and represent doping as a solution to the stated problems. In particular, extensive work done by [ 19 , 36 , 37 , 38 , 39 , 40 , 41 , 42 ] focused on Cesium (Cs) as a promising element to be used for FASnI 3 doping. In fact, Cs added to FASnI 3 can act as a reduction agent to limit the oxidation of to .…”

Optimizing Lead-Free Chalcogenide Perovskite Solar Cells: A Path to High Efficiency and Stability for Renewable Energy Conversion

“…All of the HTLs, organic (Spiro-OMeTAD) and inorganic (NiO, Cu 2 O, CuI, CuSbS 2 , and CuO), exhibit the highest J sc . This is due to their high charge carrier mobility, similar for all HTLs, whether organic or inorganic …”

“…This is due to their high charge carrier mobility, similar for all HTLs, whether organic or inorganic. 20 The J sc remains constant when the valence band offset (VBO) is negative, indicating no barrier hindering the transfer of photogenerated holes to the HTL. 21 The J sc values obtained were 36 mA/cm 2 for CuSbS 2 and 35 mA/cm 2 for all of the other HTLs.…”

Performance Optimization of Inorganic Cs2TiBr6 Based Perovskite Solar Cell via Numerical Simulation

“…The higher values of J sc are due to the high charge carrier mobility. [ 31 ] The valance band offset of NiO, Cu 2 O, CuSbS 2 , P3HT, PEDOT, CuO, CuI, NPB, MoO 3 , CZTS, and CdTe is the −0.81, −0.90, −0.62, −0.77, −0.87,‐ 0.37, −0.87, −0.67, −0.57, −0.57, −0.87 eV, respectively. A positive (+ive) value of VBO creates a barrier to moving the generated by light holes from perovskite material to hole transport material.…”