Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing

Kim, In‐Kwon; Kang, Young‐Sun; Kim, Tae-Gon; Park, Jin-Goo

doi:10.1143/jjap.47.108

Cited by 12 publications

(10 citation statements)

References 26 publications

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“…Since CMP MRR is dependent on the nanoparticle size and concentration in the slurry, the effects have been investigated by many researchers [26][27][28][29][30][31][32][33][34][35][36]. The reported results are often contradictory and are explained based on the selected ranges of the nanoparticle size and concentration, as well as by their behavior during the CMP process.…”

Section: Effect Of the Slurry Nanoparticle Size And Concentrationmentioning

confidence: 99%

“…In the literature, there are numerous studies on similar topics [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26] applied to the copper CMP of integrated circuits. It is worth mentioning that the present study intends to extend to other fields, namely to surfaces coated through selective transfer (the surfaces of the selective layer) in the friction process, considering the slurry pH (important for removal through CMP of the selective layer) [7,[22][23][24][25][26], H 2 O 2 (the most common oxidant) [27][28][29][30][31][32][33], size [21,[28][29][30][31], and concentration [12,21,34] of nanoparticles used in the CMP slurry. Thus, this paper explores the pH effect at a constant H 2 O 2 concentration on the etching and polishing behavior of the selective layer and the influences on size and concentration of nanoparticles during selective layer surface CMP.…”

Section: Introductionmentioning

confidence: 99%

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Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

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This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer. The paper aims at a better understanding of the planarization (polishing) and micromachining. The planarization becomes effective if the material removal rate (MRR) is optimal and the surface defects are minimal. The pH of the slurry plays a very important role in removing the selective layer by CMP, and hydrogen peroxide (H 2 O 2 ) is the most common oxidizer used in CMP slurry. The purpose of this paper is the analysis of the pH effect on the etching rate (ER) and on the behavior of selective layer polishing by a constant concentration of H 2 O 2 and the influence of nanoparticles size and concentration on selective layer surface CMP. The nanoparticle size used is 250 nm. The MRR results through CMP and ER have been shown to be influenced by the presence of oxides on the selective layer surface and have been found to vary with the slurry pH at constant H 2 O 2 concentrations. The CMP slurry plays an important role in the CMP process performance and should be monitored for optimum results and minimal surface defects. The paper analyzes the impact of chemical-mechanical, inter-nanoparticle, and pad-nanoparticle-substrate interactions on CMP performance, taking into account the state of friction at the interface, by measuring the friction force. Selective layer CMP optimization studies were required to control the chemical and mechanical interactions at the interface between the slurry and the selective layer, the slurry chemistry, the properties, and the stability of the suspended abrasive nanoparticles.

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Section: Effect Of the Slurry Nanoparticle Size And Concentrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Ilie

Ipate

2017

Lubricants

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“…[3][4][5][6][7] Benzotriazole (BTA, C 6 H 5 N 3 ) is a well-known corrosion inhibitor for the Cu CMP process, and many researchers have investigated the corrosion inhibition of BTA based on the adsorption and complex formation mechanism. 8,9 BTA can be effectively adsorbed on the Cu surface by forming a stable Cu-BTA complex layer; this acts as an organic residue, causing severe drying issues and poor adhesion of subsequent layers. For this reason, BTA removal from the Cu surface has also been studied extensively.…”

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confidence: 99%

Characterization of Different Cobalt Surfaces and Interactions with Benzotriazole for CMP Application

Ryu

Lee

Hwang

et al. 2020

ECS J. Solid State Sci. Technol.

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Different cobalt surfaces (as-received, metallic, and oxidized Co) were characterized by contact angle measurements, FTIR (Fourier-transform infrared spectroscopy), XPS (X-ray photoelectron spectroscopy) and EIS (electrochemical impedance spectroscopy) to investigate the interaction of these surfaces with benzotriazole (BTA). A new sequential EIS technique was used to study the inhibition capabilities of BTA on the cobalt surface and its stability under de-ionized (DI) water rinsing. It was found that a Co-BTA complex passive layer was formed when exposed to a BTA solution for all types of Co surfaces. It was hypothesized that BTA could actively form a Co-BTA complex on metallic Co as well as on the Co oxide surface. Interestingly, most Co-BTA complexes could be easily removed by simply rinsing with DI water, which indicates that BTA might not produce an organic residue issue after the chemical mechanical planarization (CMP) process. This was also well supported by potentiodynamic studies.

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“…9,10 Chemical mechanical polishing is a necessary process and the best global planarization technique up to now. 11 The goal of the copper CMP process is to remove the overburden material and planarize step heights, shown in Fig. 1.…”

mentioning

confidence: 99%

Synergistic Effect of Glycine and BTA on Step Height Reduction Efficiency after Copper CMP in Weakly Alkaline Slurry

Cao

Liu

Zhang

et al. 2016

ECS J. Solid State Sci. Technol.

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The synergistic and competitive relationship of glycine and benzotriazole (BTA) in a peroxide-based weakly alkaline slurry during the copper chemical mechanical planarization (CMP) process was studied. Based on the experimental results, we systematically analyzed the reaction mechanism of glycine and BTA in an alkaline environment; their corrosion and passivation mechanism was also discussed, which can verify the planarization performance through step height reduction efficiency. We proposed the planarization mechanism of the glycine-BTA system polishing slurry to provide a theoretical basis for the CMP planarization. It also has important reference value for the study of weakly alkaline copper CMP in the future.

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Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing

Cited by 12 publications

References 26 publications

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Characterization of Different Cobalt Surfaces and Interactions with Benzotriazole for CMP Application

Synergistic Effect of Glycine and BTA on Step Height Reduction Efficiency after Copper CMP in Weakly Alkaline Slurry

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