Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Chung, Hao-Tung; Chen, Chun‐Ting; Li, Yi-Shao; Liu, Yuwei; Liao, Chan; Huang, Wei‐Hsiang; Shieh, Jia-Min; Luo, Jun-Dao; Chuang, Kai-Chi; Chen, Kuan‐Neng; Cheng, Huang–Chung

doi:10.1109/led.2021.3049329

Cited by 4 publications

(5 citation statements)

References 16 publications

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“…Ion and Ioff at VGS = 0 V increase with increasing temperature, and the increase in Ioff is larger than that in Ion. Accordingly, Ion/Ioff increases from 5.01 × 10 9 to 1.35 × 10 10 as the temperature increases from 250 to 325 K, and subsequently, it decreases to 3.92 × 10 8 at 400 K. Nevertheless, our device exhibits outstanding Ion/Ioff (>10 8 ) over a wide temperature range compared to other steep switching devices [11]- [14]. Figure 4(b) shows the simulated IDS-VGS transfer curves, which present similar trends to the experimental data.…”

Section: Resultsmentioning

confidence: 85%

Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

et al. 2022

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In this study, the temperature-dependent electrical characteristics of p-channel mode feedback field-effect transistors (FBFETs) were examined at temperatures ranging from 250 to 425 K. Their steep subthreshold swings of less than 1 mV/dec were maintained even at temperatures up to 400 K. As the temperature increased to 400 K, the latch-up voltage shifted from −0.951 to −0.613 V, which was caused by a reduction in the potential barriers in the channels of the FBFETs. High Ion/Ioff ratios above 108 were maintained in the temperature range of 250 to 400 K. However, at temperatures over 400 K, the FBFETs were turned on regardless of the gate voltages owing to the generation of a thermally induced positive feedback loop.INDEX TERMS Field-effect transistor, positive feedback loop, temperature-dependent, simulation.

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Section: Resultsmentioning

confidence: 85%

Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

et al. 2022

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“…Currently, there are three main approaches to producing highquality top-layered thin films: layer transfer technology, [5][6][7][8] selective epitaxial growth, [9][10][11][12][13] and film crystallization technology. [14][15][16][17][18][19] However, it is crucial to acknowledge that the involved complex procedure lacks cost-effectiveness due to its intricate nature and high processing costs. Selective epitaxial growth, which involves high thermal demands, has the potential to degrade the quality of existing bottom devices and increase fabrication costs due to the need for extended annealing.…”

Section: Introductionmentioning

confidence: 99%

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Shih,

Pan,

Chung

et al. 2024

Jpn. J. Appl. Phys.

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In this study, we present a low thermal budget Elevated-Laser-Liquid-Phase-Epitaxy (ELLPE) technique designed for the precise fabrication of single-crystal islands (SCIs) intended for use in middle-end-of-line (MEOL) FinFETs. Each of these single-crystal islands features a (100) orientation tended from Si seeding structure and is successfully integrated as channel materials in the MEOL circuit of a monolithic 3D integrated circuit (3DIC). This technique effectively mitigates the typical performance disparities associated with poly-Si channel materials in upper tiers, addressing a significant challenge in advanced electronic device fabrication and potentially enhancing the performance and reliability of MEOL FinFETs in monolithic 3DIC.

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“…7 Fortunately, the impact of grainboundary traps can be mitigated by enlarging the grain size. In the past decades, several low-temperature crystallization methods, including solid-phase crystallization (SPC), [8][9][10] metal-induced crystallization (MIC) 11,12 and laser crystallization, 5,[13][14][15][16] have been proposed and performed on amorphous silicon (a-Si) layers via phase transition to a polycrystalline-state. SPC is usually executed by annealing the a-Si layer in a nitrogen ambient at a sufficiently low temperature (e.g., 600 o C) for a time-duration longer than 12 h. 8,9 The SPC process is a simple and mature technology without resorting to complex fabrication tools, but it takes a long duration of time for phase transition.…”

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confidence: 99%

“…5 Recently, green-nanoseconds laser crystallization (GLC) has been proposed as an alternative approach for boosting dc performance of poly-Si TFTs. [14][15][16] In comparison to ELC, GLC approach offers the advantages of faster running time, lower maintenance cost, and larger process window. 14,15 GLC has been applied for the construction of monolithically-integrated, threedimensional electronics.…”

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confidence: 99%

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Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

Lee

Liu

Chen

et al. 2021

ECS J. Solid State Sci. Technol.

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In this study, we investigate the static and radio-frequency characteristics of poly-Si thin-film transistors (TFTs) with the channels treated by using either green-nanoseconds laser crystallization (GLC) or solid phase crystallization (SPC) processes. The influences of the crystallization schemes on the granular structures of the resulted poly-Si as well as the device characteristics were studied and compared. Scanning Electron Microscope observations indicate that mean grain size of the 50 nm-thick poly-Si films is approximate 70 nm following the SPC process, whereas GLC process enlarges the mean grain size to 0.5 μm. As a consequence, GLC poly-Si TFTs exhibit greatly improved electron mobility and transconductance as compared to the SPC ones. Moreover, superior high-frequency characteristics with cut-off frequency (f T ) and maximum oscillation frequency (f max ) of 21.1 GHz and 24.1 GHz, respectively, are recorded in GLC devices with channel length of 0.26 μm.

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Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Cited by 4 publications

References 16 publications

Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Temperature-Dependent Electrical Characteristics of p-Channel Mode Feedback Field-Effect Transistors

Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Static and Radio-Frequency Characteristics of Green-Nanoseconds Laser-Crystallized Poly-Si Thin-Film Transistors

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