Effect of Cu Loading on the Structure and Catalytic Performance of the LNT Catalyst CuO-K&lt;sub&gt;2&lt;/sub&gt;CO&lt;sub&gt;3&lt;/sub&gt;/TiO&lt;sub&gt;2&lt;/sub&gt;

范丰奇,; 孟明,; 田野,; 郑黎荣,; Zhang, Jing; 胡天斗,

doi:10.3866/pku.whxb201507291

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…The total electronic transportation cannot be explained with the hopping conduction in this region while it is more dominated at the medium and high electrical fields. [44,45] Besides, the leakage current can be relatively larger due to the higher defect density. For the nonlinear leakage conduction mechanisms, several kinds of theorems including Schottky emission, [46] Poole-Frenkel emission, [47] Fowler-Nordheim tunneling, [48] and Space-charge-limited-current (SCLC) [49] have been proposed.…”

Section: Resultsmentioning

confidence: 99%

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Shih

Lee

Liang

et al. 2021

Adv Elect Materials

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been applied and integrated with the complementary metal-oxide-semiconductor manufacturing processes. [2] As the memory devices are kept scaling down, due to the limitation of charge-based devices such as the amount of storage and the reduction of the capacitance, [3] several kinds of noncharge-based device physics were proposed in the last decade. Resistive switching random access memory (ReRAM), one of these candidates for the next-generation nonvolatile memories, has been achieved the market requirement because of its advantages. [4] In recent years, many kinds of research have shown that ReRAM works with high switching speed [5] (<10 ns), low power consumption, [6] and large endurance cycles [7] (>10 12 cycles). The configuration consisting of merely metal-insulator-metal (M-I-M) layer to integrate ReRAM devices into 2D or even 3D crossbar array architectures is technically achievable. [8,9] The transitional metal oxides, such as TiO x , [10] TaO x , [7] and HfO x , [5] are widely selected for the sandwiched insulating layer in the redox-based ReRAM. On the other hand, active metals such as Ag and Cu to operate the device as a cation-based one are also commonly used. In both of the ReRAM devices, the switching mechanisms result from the migration of the Resistive switching random access memory (ReRAM) has recently generated significant interest due to its potentials used in nanoscale logic, memory devices, and neuromorphic applications. From the device physics, a uniform dielectric layer is necessary to access as the main switching layer to perform stable resistive switching. This, however, makes the fabrication process more challenging. In this regard, a design of resistive switching memory by an in situ current-induced oxidization process on a single crystal metallic nanowire (NW) is demonstrated where a single crystal Cu NW is found as the best material with stable switching behaviors after the in situ current-induced oxidization process. With the in situ current-induced oxidization process by high current density on the Cu NW, a reversible resistive switching up to 100 cycles with a large ON/OFF ratio of >10 3 and a low switching voltage of <0.5 V can be obtained. The initial current-induced oxidation provides a core-shell (Cu 2 O/Cu) nanowire structure that contributed to the switching properties. The possible switching mechanisms and potential guidelines are systematically proposed. The current work opens up the opportunities to design the ReRAM device with full-metallic materials.

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Section: Resultsmentioning

confidence: 99%

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Shih

Lee

Liang

et al. 2021

Adv Elect Materials

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Catalytic oxidation of ethyl acetate over Ru–Cu bimetallic catalysts: Further insights into reaction mechanism via in situ FTIR and DFT studies

Liu

Han

Shi

et al. 2019

Journal of Catalysis

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Enhanced activity of CuO/K₂CO₃/MgAl₂O₄catalyst for lean NO_xstorage and reduction at high temperatures

Liu

Guo

et al. 2017

RSC Adv.

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Effect of Cu Loading on the Structure and Catalytic Performance of the LNT Catalyst CuO-K<sub>2</sub>CO<sub>3</sub>/TiO<sub>2</sub>

Cited by 3 publications

References 30 publications

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Catalytic oxidation of ethyl acetate over Ru–Cu bimetallic catalysts: Further insights into reaction mechanism via in situ FTIR and DFT studies

Enhanced activity of CuO/K₂CO₃/MgAl₂O₄catalyst for lean NO_xstorage and reduction at high temperatures

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Effect of Cu Loading on the Structure and Catalytic Performance of the LNT Catalyst CuO-K<sub>2</sub>CO<sub>3</sub>/TiO<sub>2</sub>

Cited by 3 publications

References 30 publications

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Catalytic oxidation of ethyl acetate over Ru–Cu bimetallic catalysts: Further insights into reaction mechanism via in situ FTIR and DFT studies

Enhanced activity of CuO/K2CO3/MgAl2O4catalyst for lean NOxstorage and reduction at high temperatures

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Enhanced activity of CuO/K₂CO₃/MgAl₂O₄catalyst for lean NO_xstorage and reduction at high temperatures