Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

Cellere, G.; Paccagnella, A.; Visconti, A.; Bonanomi, M.; Candelori, A.; Lora, S.

doi:10.1109/tns.2005.860681

Cited by 41 publications

(11 citation statements)

References 28 publications

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“…These effects do not strongly depend on scaling [51], partially because there is no more scaling of the oxide thicknesses from one generation to the next due to reliability issues. Differences between various sources of TID and dose enhancement effects have been addressed in [57]. Thanks to their sensitivity, FG devices have been proposed as radiation dosimeters [58]- [62].…”

Section: Radiation Effectsmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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Section: Radiation Effectsmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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“…This is illustrated in Fig. A physics model to account for these effects has been first developed by Snyder et al in 1989 [48] and further developed in recent times to account for the changes in the technology happened in almost 20 years [51,52]. Before irradiation, V TH distributions closely resemble the expected Gaussian shape.…”

Section: Total Ionizing Dosementioning

confidence: 97%

“…This issue was first addressed in NOR architecture [51] but it is more severe in NAND architecture [52] because of the smaller cell size (4F²) and therefore smaller distance to adjacent cells. 3.1.3 the threshold voltage of the floating gate cell is not a device constant but it is also dependent on its environment.…”

Section: Floating Gate Cross-couplingmentioning

confidence: 99%

Inside NAND Flash Memories

Micheloni¹,

Crippa²,

Marelli³

2010

216

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“…Part of them will be injected Fig 4), while the remaining will be trapped in the oxide (second contribution , Fig 4), the electrons stored in the FG are photo-emitted (third contribution, Fig 4), gaining enough energy from the impinging radiation to jump over the energy barrier of the oxide [9] [11] [12]. [13]. In these works specified that …”

Section: Tid Eff Ect On Fg Memory Cellsmentioning

confidence: 99%

Simulation of TID effect on floating gate cells

Aguirre

Wirth

2013

28th Symposium on Microelectronics Technology and Devices (SBMicro 2013)

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This paper discusses the electrical simulation of Non-Volatile Memor y Cells, based on the Floating Gate Cells, and aiming at the evaluation of Total Ionizing Dose (TID) effect of this memor y cell. An electrical model based on simple electric elements is implemented to allow the simulation of the floating gate using standard electrical simulations tools (e.g. Spice). For the evaluation of TID effects the electrical parameters of the MOS transistor (i.e threshold voltage and leakage current between de source and drain terminals) are varied according to experimental data from the literature

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Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

Cited by 41 publications

References 28 publications

Present and Future Non-Volatile Memories for Space

Present and Future Non-Volatile Memories for Space

Inside NAND Flash Memories

Simulation of TID effect on floating gate cells

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